Highly Efficient Cu(In,Ga)Se2 Thin-Film Submodule Fabricated Using a Three-Stage Process

Using a three-stage process, a highly efficient, integrated chalcopyrite Cu(In,Ga)Se 2 (CIGS) submodule was fabricated with a certified efficiency of 18.34% and an open circuit voltage of 2.963 V, a short circuit current of 29.05 mA, a fill factor of 0.762, and a designated area of 3.576 cm 2 . The...

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Published inApplied physics express Vol. 6; no. 11; pp. 112303 - 112303-4
Main Authors Kamikawa-Shimizu, Yukiko, Komaki, Hironori, Yamada, Akimasa, Ishizuka, Shogo, Iioka, Masayuki, Higuchi, Hirofumi, Takano, Miwako, Matsubara, Koji, Shibata, Hajime, Niki, Shigeru
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.11.2013
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Summary:Using a three-stage process, a highly efficient, integrated chalcopyrite Cu(In,Ga)Se 2 (CIGS) submodule was fabricated with a certified efficiency of 18.34% and an open circuit voltage of 2.963 V, a short circuit current of 29.05 mA, a fill factor of 0.762, and a designated area of 3.576 cm 2 . The diode properties and parasitic resistances of the submodule and a reference single cell containing a CIGS absorber layer identical to that in the submodule were determined using a distributed diode model. In addition, the fundamental loss mechanisms for the submodule were investigated.
Bibliography:Schematics of (a) submodule and (b) single cell. The submodule consisted of four interconnected cells each with an area of approximately $2\times 0.5$ cm 2 . The single cell had an active area of 0.514 cm 2 . $I$--$V$ curve for integrated CIGS submodule and its photovoltaic performance. Photovoltaic properties: (a) efficiency, (b) $V_{\text{OC}}$, (c) $J_{\text{SC}}$, and (d) $\mathit{FF}$ of submodule (diamond shapes) and single cell (circles), including our previously reported results (squares). Properties of the submodule are certified values, while the other data are in-house measurement results. (a) EQE for submodule and single cell, together with transmittance of n-ZnO layers. (b) In-house measured and fitted $J$--$V$ curves for sub module and single cell. (c) $V_{i}$ and $J_{i}$ distributions calculated using distrib uted diode model for the submodule and the single cell under illuminated condition with applied $V$ that provided the maximum power output (submodule, 0.603 V; single cell, 0.605 V). $J$ and $V$ are shown as black bars. Equivalent circuits for region of a cell with width $W$ using (a) single diode model and (b) distributed diode model.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.6.112303