AlGaN photodiodes for UVC, UVB and UVA spectral ranges
A technology of ultraviolet photodiodes based on Me-AlGaN Schottky barrier separating in UVA, UVB and UVC spectral ranges was proposed. The effect of altering the AlGaN soild solution composition on the long-wavelength edge of photosensitivity of fabricated photodetector was studied. Influence of Sc...
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Published in | 2015 IEEE NW Russia Young Researchers in Electrical and Electronic Engineering Conference (EIConRusNW) pp. 30 - 32 |
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Main Authors | , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.02.2015
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Subjects | |
Online Access | Get full text |
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Summary: | A technology of ultraviolet photodiodes based on Me-AlGaN Schottky barrier separating in UVA, UVB and UVC spectral ranges was proposed. The effect of altering the AlGaN soild solution composition on the long-wavelength edge of photosensitivity of fabricated photodetector was studied. Influence of Schottky barrier metal on the value of structures photosensitivity was examined. |
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ISBN: | 9781479973057 147997305X |
DOI: | 10.1109/EIConRusNW.2015.7102225 |