Preparation of Cu2SnS3 Thin Films by Sulfurization of Cu/Sn Stacked Precursors
Cu 2 SnS 3 (CTS) has been reported to have various band gap energies in the range of 0.93--1.77 eV and an absorption coefficient of $1.0\times 10^{4}$ cm -1 . It consists of elements that are inexpensive due to their abundance in Earth's crust. Consequently, CTS is expected to be utilized in th...
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Published in | Jpn J Appl Phys Vol. 51; no. 10; pp. 10NC35 - 10NC35-4 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
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The Japan Society of Applied Physics
25.10.2012
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Abstract | Cu 2 SnS 3 (CTS) has been reported to have various band gap energies in the range of 0.93--1.77 eV and an absorption coefficient of $1.0\times 10^{4}$ cm -1 . It consists of elements that are inexpensive due to their abundance in Earth's crust. Consequently, CTS is expected to be utilized in the absorber layers of thin-film solar cells. In this study, Cu/Sn stacked-layer thin-film precursors were deposited on glass and glass/Mo substrates by electron beam evaporation. CTS thin films were fabricated by sulfurizing the precursors at temperatures of 450--580 °C for 2 h in an atmosphere of N 2 and sulfur vapor. CTS films were estimated to have band gap energies of 0.96--1.00 eV by extrapolation. A solar cell fabricated using a CTS thin film sulfurized at 580 °C exhibited an open-circuit voltage of 211 mV, a short-circuit current of 28.0 mA/cm 2 , a fill factor of 0.43, and a conversion efficiency of 2.54%. |
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AbstractList | Cu 2 SnS 3 (CTS) has been reported to have various band gap energies in the range of 0.93--1.77 eV and an absorption coefficient of $1.0\times 10^{4}$ cm -1 . It consists of elements that are inexpensive due to their abundance in Earth's crust. Consequently, CTS is expected to be utilized in the absorber layers of thin-film solar cells. In this study, Cu/Sn stacked-layer thin-film precursors were deposited on glass and glass/Mo substrates by electron beam evaporation. CTS thin films were fabricated by sulfurizing the precursors at temperatures of 450--580 °C for 2 h in an atmosphere of N 2 and sulfur vapor. CTS films were estimated to have band gap energies of 0.96--1.00 eV by extrapolation. A solar cell fabricated using a CTS thin film sulfurized at 580 °C exhibited an open-circuit voltage of 211 mV, a short-circuit current of 28.0 mA/cm 2 , a fill factor of 0.43, and a conversion efficiency of 2.54%. |
Author | Chino, Kotaro Jimbo, Kazuo Eguchi, Shinya Katagiri, Hironori Koike, Junpei Nakamura, Ryota Araki, Hideaki |
Author_xml | – sequence: 1 givenname: Kotaro surname: Chino fullname: Chino, Kotaro organization: Nagaoka National College of Technology, Nagaoka, Niigata 940-8532, Japan – sequence: 2 givenname: Junpei surname: Koike fullname: Koike, Junpei organization: Nagaoka National College of Technology, Nagaoka, Niigata 940-8532, Japan – sequence: 3 givenname: Shinya surname: Eguchi fullname: Eguchi, Shinya organization: Nagaoka National College of Technology, Nagaoka, Niigata 940-8532, Japan – sequence: 4 givenname: Hideaki surname: Araki fullname: Araki, Hideaki organization: Nagaoka National College of Technology, Nagaoka, Niigata 940-8532, Japan – sequence: 5 givenname: Ryota surname: Nakamura fullname: Nakamura, Ryota organization: Nagaoka National College of Technology, Nagaoka, Niigata 940-8532, Japan – sequence: 6 givenname: Kazuo surname: Jimbo fullname: Jimbo, Kazuo organization: Nagaoka National College of Technology, Nagaoka, Niigata 940-8532, Japan – sequence: 7 givenname: Hironori surname: Katagiri fullname: Katagiri, Hironori organization: Nagaoka National College of Technology, Nagaoka, Niigata 940-8532, Japan |
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Notes | XRD spectra of sulfurized films. Detailed XRD spectra at diffraction angles, $2\theta$, around 28.5° (a), 47.5° (b), and 56.3° (c), of sulfurized films. Surface morphologies and cross-sectional SEM images of sulfurized films. Square of the absorption coefficient of the sulfurized films as a function of photon energy. $J$--$V$ characteristics of CTS solar cells. |
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