Permittivity Characterization of Ferroelectric Thin-Film Hafnium Zirconium Oxide Varactors up to 170 GHz

• Published in: Conference digest / Device Research Conference pp. 1 - 2
• Main Authors: Abdulazhanov, S., Le, Q. H., Huynh, D. K., Lehninger, D., Kampfe, T., Gerlach, G.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 25.06.2023
• Subjects: Radio frequency; Semiconductor materials; Strontium; Temperature; Titanium compounds; Varactors; Zirconium

Ferroelectric materials are commonly utilized in mmWave applications as tunable devices. They offer low-loss operation at frequencies above 20 GHz due to their high dielectric permittivity, surpassing conventional semiconductor materials. Perovskite-based ferroelectrics, such as barium strontium tit...