Design and Performance Analysis of 6T SRAM cell on 90nm technology

Due to its substantial storage capacity and rapid access times, SRAM has emerged as a key element in many VLSI Chips. The quick development of low-voltage, low-power devices memory design over the past few years due to the surge in demand for notebooks and laptops has made SRAM the subject of extens...

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Bibliographic Details
Published in2023 4th IEEE Global Conference for Advancement in Technology (GCAT) pp. 1 - 5
Main Authors Zargar, Mehak, Goel, Anuj Kumar
Format Conference Proceeding
LanguageEnglish
Published IEEE 06.10.2023
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