Restrictive antenna rules limiting PID degradation for MOS transistors with connected MIM-capacitors
The plasma processing steps required for the implementation of the various layers of Metal-Insulator-Metal capacitors in a metal stack can cause severe damage for a directly connected MOS transistor. Such plasma damage requires a thorough characterization and subsequent design rules which restrictin...
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| Published in | 2023 IEEE International Integrated Reliability Workshop (IIRW) pp. 1 - 6 |
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| Main Authors | , , , |
| Format | Conference Proceeding |
| Language | English |
| Published |
IEEE
08.10.2023
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| Subjects | |
| Online Access | Get full text |
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| Abstract | The plasma processing steps required for the implementation of the various layers of Metal-Insulator-Metal capacitors in a metal stack can cause severe damage for a directly connected MOS transistor. Such plasma damage requires a thorough characterization and subsequent design rules which restricting the antenna ratio of a Metal-Insulator-Metal capacitor as an antenna. A new set of antenna design rules are proposed on the basis of reliability stress data and results from the literature. Worst case antenna geometries as well as protection methods are presented. |
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| AbstractList | The plasma processing steps required for the implementation of the various layers of Metal-Insulator-Metal capacitors in a metal stack can cause severe damage for a directly connected MOS transistor. Such plasma damage requires a thorough characterization and subsequent design rules which restricting the antenna ratio of a Metal-Insulator-Metal capacitor as an antenna. A new set of antenna design rules are proposed on the basis of reliability stress data and results from the literature. Worst case antenna geometries as well as protection methods are presented. |
| Author | Martin, Andreas Pham, Phi-Long Nielen, Heiko Feil, Maximilian W. |
| Author_xml | – sequence: 1 givenname: Andreas surname: Martin fullname: Martin, Andreas email: Andreas.Martin@infineon.com organization: Infineon Technologies AG,Corporate Reliability Department,Neubiberg,Germany – sequence: 2 givenname: Phi-Long surname: Pham fullname: Pham, Phi-Long email: Phi-Long.Pham@infineon.com organization: Infineon Technologies AG,Corporate Reliability Department,Neubiberg,Germany – sequence: 3 givenname: Heiko surname: Nielen fullname: Nielen, Heiko email: Heiko.Nielen@infineon.com organization: Infineon Technologies AG,Corporate Reliability Department,Neubiberg,Germany – sequence: 4 givenname: Maximilian W. surname: Feil fullname: Feil, Maximilian W. email: Maximilian.Feil@infineon.com organization: Infineon Technologies AG,Corporate Reliability Department,Neubiberg,Germany |
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| Snippet | The plasma processing steps required for the implementation of the various layers of Metal-Insulator-Metal capacitors in a metal stack can cause severe damage... |
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| SubjectTerms | antenna antenna ratio Degradation design rules diode protection Logic gates Manuals Metals MIM MIM capacitors MOS MOSFET PID plasma charging reliability Reliability engineering |
| Title | Restrictive antenna rules limiting PID degradation for MOS transistors with connected MIM-capacitors |
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