Research on Battery Charge and Discharge System of GaN-Based Bidirectional SuperBuck Converter

• Published in: 2023 IEEE International Conference on Power Science and Technology (ICPST) pp. 229 - 233
• Main Authors: Yang, Shuaifei, Zhu, Zirui, Liu, Yang, Wu, Chunyu, Li, Yang, Liu, Shichao
• Format: Conference Proceeding
• Language: English
• Published: IEEE 05.05.2023
• Subjects: Batteries; BCDR; bidirectional DC-DC converter; Density measurement; Discharges (electric); GaN HEMT; HEMTs; Power system measurements; Stability analysis; SuperBuck; Switches
• DOI: 10.1109/ICPST56889.2023.10165587

With the continuous development of space power supply technology, the demand for high-performance battery charge and discharge regulato (BCDR) is increasingly urgent. And high efficiency and high power density of BCDR have become the focus of research. The traditional BCDR mostly adopts the method of separating the charge circuit from the discharge circuit, which greatly increases the system volume. Using a bidirectional DC-DC converter with a new wide band gap device as the charge and discharge circuit can not only realize the bidirectional flow of energy, but also make the system more efficient and lightweight. In this paper, the structure and characteristics of Gallium High Electron Mobility Transistor (GaN HEMT) are first introduced. Then the operation principle and characteristics of bidirectional SuperBuck converter based on GaN HEMT are analyzed. Besides, an adaptive charge and discharge energy management strategy based on bus voltage information are proposed. Finally a principle prototype is built. Theoretical and experimental results prove that bidirectional SuperBuck topology based on GaN HEMT is suitable for high efficiency and high power density battery charge and discharge system.