Invited: Polarization engineering in GaN-based normally-off transistors

• Published in: 2021 IEEE International Meeting for Future Electron Devices, Kansai (IMFEDK) pp. 1 - 4
• Main Authors: Gregusova, Dagmar, Pohorelec, Ondrej, Tapajna, Milan, Blaho, Michal, Gucmann, Filip, Stoklas, Roman, Hasenohrl, Stanislav, Laurencikova, Agata, Sichman, Peter, Hascik, Stefan, Kuzmik, Jan
• Format: Conference Proceeding
• Language: English
• Published: IEEE 17.11.2021
• Subjects: component; Electron devices; Etching; GaN; HEMTs; InGaN; Logic gates; normally-off HEMT; polarization; Proposals; threshold volatge instability; Transistors; Wide band gap semiconductors

Proposal and processing aspects of the proof-of-concept InGaN/AlGaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) with etched gate recess and access regions are addressed. Large negative polarization charge in the MOS gate stack provides the HEMT normally-off operation, whil...