Invited: Polarization engineering in GaN-based normally-off transistors

Proposal and processing aspects of the proof-of-concept InGaN/AlGaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) with etched gate recess and access regions are addressed. Large negative polarization charge in the MOS gate stack provides the HEMT normally-off operation, whil...

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Published in2021 IEEE International Meeting for Future Electron Devices, Kansai (IMFEDK) pp. 1 - 4
Main Authors Gregusova, Dagmar, Pohorelec, Ondrej, Tapajna, Milan, Blaho, Michal, Gucmann, Filip, Stoklas, Roman, Hasenohrl, Stanislav, Laurencikova, Agata, Sichman, Peter, Hascik, Stefan, Kuzmik, Jan
Format Conference Proceeding
LanguageEnglish
Published IEEE 17.11.2021
Subjects
component
Electron devices
Etching
GaN
HEMTs
InGaN
Logic gates
normally-off HEMT
polarization
Proposals
threshold volatge instability
Transistors
Wide band gap semiconductors
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Abstract Proposal and processing aspects of the proof-of-concept InGaN/AlGaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) with etched gate recess and access regions are addressed. Large negative polarization charge in the MOS gate stack provides the HEMT normally-off operation, while free electrons are populated at access regions after the etching. Self-aligned approach was used for gate stacks preparation.
AbstractList Proposal and processing aspects of the proof-of-concept InGaN/AlGaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) with etched gate recess and access regions are addressed. Large negative polarization charge in the MOS gate stack provides the HEMT normally-off operation, while free electrons are populated at access regions after the etching. Self-aligned approach was used for gate stacks preparation.
Author Stoklas, Roman
Laurencikova, Agata
Pohorelec, Ondrej
Tapajna, Milan
Sichman, Peter
Hascik, Stefan
Hasenohrl, Stanislav
Blaho, Michal
Kuzmik, Jan
Gregusova, Dagmar
Gucmann, Filip
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  givenname: Ondrej
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  surname: Blaho
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  organization: Slovak Academy of Sciences,Institute of Electrical Engineering,Bratislava,Slovak Republic,84104
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  givenname: Agata
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  fullname: Laurencikova, Agata
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– sequence: 9
  givenname: Peter
  surname: Sichman
  fullname: Sichman, Peter
  organization: Slovak Academy of Sciences,Institute of Electrical Engineering,Bratislava,Slovak Republic,84104
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  givenname: Stefan
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  organization: Slovak Academy of Sciences,Institute of Electrical Engineering,Bratislava,Slovak Republic,84104
– sequence: 11
  givenname: Jan
  surname: Kuzmik
  fullname: Kuzmik, Jan
  email: jan.kuzmik@savba.sk
  organization: Slovak Academy of Sciences,Institute of Electrical Engineering,Bratislava,Slovak Republic,84104
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SubjectTerms component
Electron devices
Etching
GaN
HEMTs
InGaN
Logic gates
normally-off HEMT
polarization
Proposals
threshold volatge instability
Transistors
Wide band gap semiconductors
Title Invited: Polarization engineering in GaN-based normally-off transistors
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