Invited: Polarization engineering in GaN-based normally-off transistors
Proposal and processing aspects of the proof-of-concept InGaN/AlGaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) with etched gate recess and access regions are addressed. Large negative polarization charge in the MOS gate stack provides the HEMT normally-off operation, whil...
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Published in | 2021 IEEE International Meeting for Future Electron Devices, Kansai (IMFEDK) pp. 1 - 4 |
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Main Authors | , , , , , , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
17.11.2021
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Subjects | |
Online Access | Get full text |
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Summary: | Proposal and processing aspects of the proof-of-concept InGaN/AlGaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) with etched gate recess and access regions are addressed. Large negative polarization charge in the MOS gate stack provides the HEMT normally-off operation, while free electrons are populated at access regions after the etching. Self-aligned approach was used for gate stacks preparation. |
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DOI: | 10.1109/IMFEDK53601.2021.9637667 |