CMOS design of the power and modulation stage for a light emitting capacitor (LEC)
The main problem in making electrophotonic circuits entirely in silicon is to have a light source compatible and embeddable in an integrated circuit manufacturing technology. Light Emitting Capacitors (LEC) based on Silicon Rich Oxide (SRO) are an alternative to solve this problem. However, the volt...
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Published in | 2019 16th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE) pp. 1 - 5 |
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Main Authors | , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.09.2019
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Subjects | |
Online Access | Get full text |
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Summary: | The main problem in making electrophotonic circuits entirely in silicon is to have a light source compatible and embeddable in an integrated circuit manufacturing technology. Light Emitting Capacitors (LEC) based on Silicon Rich Oxide (SRO) are an alternative to solve this problem. However, the voltage needed to turn on the LEC is high when compared with the voltage ranges used in electronic integrated circuits. This work shows how a standard power (5 V) CMOS technology is used to integrate a LEC and the electronics needed to turn it on and off in a controlled way from a standard input voltage (5 V). For this purpose, a pulsed-width modulator (PWM) and a voltage booster circuit based on a Dickson charge pump are designed. The layout of the electrophotonic circuit and the post-layout simulations are presented. |
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ISSN: | 2642-3766 |
DOI: | 10.1109/ICEEE.2019.8884559 |