Performance Analysis of Silicon and III-V Channel Material for Junctionless-Gate-All-Around Field Effect Transistor

• Published in: 2020 IEEE Student Conference on Research and Development (SCOReD) pp. 1 - 5
• Main Authors: Rasol, M. F. M., Hamid, F. K. A., Johari, Zaharah, Arsat, Rashidah, Yusoff, M.F.M.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 27.09.2020
• Subjects: Gallium arsenide; Gallium nitride; III-V semiconductor materials; junctionless-gate-au-around; Performance analysis; Performance evaluation; Research and development; short channel effects; Silicon; Threshold voltage

The scaling down of device dimension beyond the Moore's Law era have introduce the use of new material and device architecture. This paper reports a comparative study between Silicon and III-V junctionless-gate-all-around (JGAA) transistor as an alternative approach to overcome the short channe...