Behavior of notional cap-area efficiency (gn) for hemisphere-on-plane and related field emitters

We obtained and compared numerical and analytical results for the hemisphere-on-plane notional cap-area efficiency. For various emitter shapes, the behavior of the notional emission area has been analyzed. The shape contributon to the pre-exponential voltage exponent was obtained by plotting the not...

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Bibliographic Details
Published in2021 34th International Vacuum Nanoelectronics Conference (IVNC) pp. 1 - 2
Main Authors Filippov, S.V., Kolosko, A.G., Popov, E.O., Forbes, Richard G.
Format Conference Proceeding
LanguageEnglish
Published IEEE 05.07.2021
Subjects
cap-area efficiency
Current-voltage characteristics
emission area
emitter shapes
hemisphere-on-cylindrical-post
hemisphere-on-plane
k A shape contribution power
k-power
kernel current density
Nanoelectronics
notional emission area
pre-exponential voltage exponent
Shape
Surface treatment
Voltage
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Summary:We obtained and compared numerical and analytical results for the hemisphere-on-plane notional cap-area efficiency. For various emitter shapes, the behavior of the notional emission area has been analyzed. The shape contributon to the pre-exponential voltage exponent was obtained by plotting the notional cap-area efficiency against the apex value of dimensionless local surface field.
ISSN:2380-6311
DOI:10.1109/IVNC52431.2021.9600792