RON Degradation Mechanisms of ON-Wafer 100-V p-GaN HEMTs Emulating Monolithically Integrated Half-Bridge Circuits

• Published in: IEEE Workshop on Wide Bandgap Power Devices and Applications pp. 1 - 4
• Main Authors: Zagni, Nicolo, Modica, Lorenzo, Cioni, Marcello, Cappellini, Giacomo, Castagna, Maria Eloisa, Giorgino, Giovanni, Iucolano, Ferdinando, Verzellesi, Giovanni, Chini, Alessandro
• Format: Conference Proceeding
• Language: English
• Published: IEEE 04.11.2024
• Subjects: C-doping; Circuits; Degradation; dynamic Ron; Gate Hole Leakage Current; Half-Bridge; HEMTs; Hole Emission; Leakage currents; MODFETs; Numerical simulation; p-GaN HEMTs; Performance evaluation; Stress; Substrates; Voltage

We present experimental data and numerical simulation results revealing different dynamic Rov mechanisms in on-wafer 100 V p-GaN HEMTs to be used as low- (LS) and high-side (HS) devices in monolithically integrated half-bridge circuits. A circuit configuration emulating stress conditions encountered...