APA (7th ed.) Citation

Zagni, N., Modica, L., Cioni, M., Cappellini, G., Castagna, M. E., Giorgino, G., . . . Chini, A. (2024, November 4). RON Degradation Mechanisms of ON-Wafer 100-V p-GaN HEMTs Emulating Monolithically Integrated Half-Bridge Circuits. IEEE Workshop on Wide Bandgap Power Devices and Applications, 1-4. https://doi.org/10.1109/WiPDA62103.2024.10773316

Chicago Style (17th ed.) Citation

Zagni, Nicolo, Lorenzo Modica, Marcello Cioni, Giacomo Cappellini, Maria Eloisa Castagna, Giovanni Giorgino, Ferdinando Iucolano, Giovanni Verzellesi, and Alessandro Chini. "RON Degradation Mechanisms of ON-Wafer 100-V P-GaN HEMTs Emulating Monolithically Integrated Half-Bridge Circuits." IEEE Workshop on Wide Bandgap Power Devices and Applications 4 Nov. 2024: 1-4. https://doi.org/10.1109/WiPDA62103.2024.10773316.

MLA (9th ed.) Citation

Zagni, Nicolo, et al. "RON Degradation Mechanisms of ON-Wafer 100-V P-GaN HEMTs Emulating Monolithically Integrated Half-Bridge Circuits." IEEE Workshop on Wide Bandgap Power Devices and Applications, 4 Nov. 2024, pp. 1-4, https://doi.org/10.1109/WiPDA62103.2024.10773316.