Determination of small-signal parameters of GaN-based HEMTs

The small-signal equivalent circuit of AlGaN/GaN HEMT is discussed It is shown that an extremely high gate voltage has to be applied to correctly determine series resistances. Effects appearing at high forward gate voltages are discussed. Good agreement between measured and simulated data has been a...

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Bibliographic Details
Published inProceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122) pp. 115 - 122
Main Authors Chigaeva, E., Walthes, W., Wiegner, D., Grozing, M., Schaich, F., Wieser, N., Berroth, M., Breitschadel, O., Kley, L., Kuhn, B., Scholz, F., Schweizer, H., Ambacher, O., Hilsenbeck, J.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2000
Subjects
Aluminum gallium nitride
Equivalent circuits
Fabrication
FETs
Gallium nitride
HEMTs
MODFETs
Ohmic contacts
Optical fiber communication
Voltage
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Summary:The small-signal equivalent circuit of AlGaN/GaN HEMT is discussed It is shown that an extremely high gate voltage has to be applied to correctly determine series resistances. Effects appearing at high forward gate voltages are discussed. Good agreement between measured and simulated data has been achieved.
ISBN:9780780363816
0780363817
ISSN:1529-3068
DOI:10.1109/CORNEL.2000.902526