Noise Figure Modeling Subject to Frequency and Temperature for AlGaN/GaN HEMTs

• Published in: 2022 International Conference on Innovations in Science, Engineering and Technology (ICISET) pp. 606 - 609
• Main Authors: Alim, Mohammad Abdul, Rezazadeh, Ali A., Gaquiere, Christophe
• Format: Conference Proceeding
• Language: English
• Published: IEEE 26.02.2022
• Subjects: and modeling; GaN HEMT; HEMTs; measurement; Microwave circuits; Microwave integrated circuits; Noise figure; noisefigure; performance analysis; Silicon; Silicon carbide; Temperature distribution; thermal impact

The microwave noise Figure modelling for AlGaN/GaN HEMTs is shown in this study over a large range of temperatures e.g., -40 to 150°C. Standard noise parameters for example minimum noise Figure NF min ), normalized noise equivalent resistance R s , and association gain G a were modelled at various f...