Detailed Analysis of the Role of Thin-HfO2 Interfacial Layer in Ge2Sb2Te5-Based PCM

Vol. 60, no.7, pp.2268-2275, doi: (July 2013)

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 60; no. 7; pp. 2268 - 2275
Main Authors HUBERT, Quentin, JAHAN, Carine, TOFFOLI, Alain, DELAYE, Vincent, LAFOND, Dominique, GRAMPEIX, Helen, DE SALVO, Barbara
Format Journal Article
LanguageEnglish
Published New York, NY Institute of Electrical and Electronics Engineers 01.07.2013
Subjects
Applied sciences
Circuit properties
Design. Technologies. Operation analysis. Testing
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Engineering Sciences
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Micro and nanotechnologies
Microelectronics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Switching, multiplexing, switched capacity circuits
Interfacial layer
Performance evaluation
Circuit design
Random access memory
Hafnium oxide
Modeling
Thin film
Electrical measurement
Energy dispersion
Non volatile memory
Enhanced data-retention
Tungsten
Integrated circuit
RESET current reduction
Selector switch
PCM material
Computer aided design
interface engineering phase-change memory (PCM)
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More Information
Summary:Vol. 60, no.7, pp.2268-2275, doi: (July 2013)
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2013.2264323