Investigation of the Interaction of Y.sub.2O.sub.3-Al.sub.2O.sub.3-SiO.sub.2 Coatings with Water Vapor and Na.sub.2SO.sub.4 at Temperatures to 1450°C
Coatings based on the system Y.sub.2O.sub.3-Al.sub.2O.sub.3-SiO.sub.2 are promising for protecting silicon carbide based materials from the effects of an oxidizing atmosphere, water vapor, and salt vapors. The interaction of Y.sub.2O.sub.3-Al.sub.2O.sub.3-SiO.sub.2 coatings, obtained by the sol-gel...
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Published in | Glass and ceramics Vol. 78; no. 7-8; pp. 301 - 307 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Springer
01.11.2021
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Subjects | |
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Abstract | Coatings based on the system Y.sub.2O.sub.3-Al.sub.2O.sub.3-SiO.sub.2 are promising for protecting silicon carbide based materials from the effects of an oxidizing atmosphere, water vapor, and salt vapors. The interaction of Y.sub.2O.sub.3-Al.sub.2O.sub.3-SiO.sub.2 coatings, obtained by the sol-gel method, with water vapor and Na.sub.2SO.sub.4 salt was investigated. Coatings based on the yttrium aluminosilicate system were found to have good oxidative and chemical resistance to water vapor and Na.sub.2SO.sub.4 salt at temperatures 1300 - 1450°C. The weight gain for the coated samples tested in Na.sub.2SO.sub.4 salt vapor did not exceed 1%. The initial SiC substrates are characterized by active oxidation processes with weight reduction from 8 to 11%. |
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AbstractList | Coatings based on the system Y.sub.2O.sub.3-Al.sub.2O.sub.3-SiO.sub.2 are promising for protecting silicon carbide based materials from the effects of an oxidizing atmosphere, water vapor, and salt vapors. The interaction of Y.sub.2O.sub.3-Al.sub.2O.sub.3-SiO.sub.2 coatings, obtained by the sol-gel method, with water vapor and Na.sub.2SO.sub.4 salt was investigated. Coatings based on the yttrium aluminosilicate system were found to have good oxidative and chemical resistance to water vapor and Na.sub.2SO.sub.4 salt at temperatures 1300 - 1450°C. The weight gain for the coated samples tested in Na.sub.2SO.sub.4 salt vapor did not exceed 1%. The initial SiC substrates are characterized by active oxidation processes with weight reduction from 8 to 11%. |
Audience | Academic |
Author | Solntsev, S. S Lebedeva, Yu. E Shchegoleva, N. E Chainikova, A. S |
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Snippet | Coatings based on the system Y.sub.2O.sub.3-Al.sub.2O.sub.3-SiO.sub.2 are promising for protecting silicon carbide based materials from the effects of an... |
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Title | Investigation of the Interaction of Y.sub.2O.sub.3-Al.sub.2O.sub.3-SiO.sub.2 Coatings with Water Vapor and Na.sub.2SO.sub.4 at Temperatures to 1450°C |
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