Effect of composition gradient in Cu(In,Al)Se 2 solar cells
Cu(In,Al)Se 2 (CIAS) thin films were prepared by a three-stage evaporation process. In this experiment, the composition ratio of Cu/(In+Al) at the end of the second stage (Cu/III 2nd) was changed from 1.1 to 1.7. The CIAS films showed an Al distribution with a V-shape profile. The valley depth of th...
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Published in | Solar energy materials and solar cells Vol. 93; no. 6; pp. 922 - 925 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
01.06.2009
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Abstract | Cu(In,Al)Se
2 (CIAS) thin films were prepared by a three-stage evaporation process. In this experiment, the composition ratio of Cu/(In+Al) at the end of the second stage (Cu/III
2nd) was changed from 1.1 to 1.7. The CIAS films showed an Al distribution with a V-shape profile. The valley depth of the V-shape from the surface increased with increasing the Cu/III
2nd ratio. The valleys of the V-shape for the films with the Cu/III
2nd ratio of 1.1–1.7 were located at approximately 0.3–1.0
μm from the film surface, respectively. The rms surface roughness increased from 40
nm for Cu/III
2nd=1.1 to 90
nm at Cu/III
2nd=1.3 and then saturated for greater Cu/III
2nd ratios. Solar cells with the Al/ITO/ZnO/CdS/CIAS/Mo/soda-lime glass structure were fabricated. The fill factor was seen to decrease while the product of short-circuit current and open-circuit voltage remained constant. The reverse saturation current increased when the Cu/III
2nd ratio is greater than 1.3 which is a behavior of the surface roughness. Cu/III
2nd ratios greater than 1.3 lead to the distant position of V-shape from the surface and the increase in surface roughness. |
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AbstractList | Cu(In,Al)Se[sub]2 (CIAS) thin films were prepared by a three-stage evaporation process. In this experiment, the composition ratio of Cu/(In+Al) at the end of the second stage (Cu/III[sub]2nd) was changed from 1.1 to 1.7. The CIAS films showed an Al distribution with a V-shape profile. The valley depth of the V-shape from the surface increased with increasing the Cu/III[sub]2nd ratio. The valleys of the V-shape for the films with the Cu/III[sub]2nd ratio of 1.1-1.7 were located at approximately 0.3-1.0 [micro]m from the film surface, respectively. The rms surface roughness increased from 40 nm for Cu/III[sub]2nd=1.1 to 90 nm at Cu/III[sub]2nd=1.3 and then saturated for greater Cu/III[sub]2nd ratios. Solar cells with the Al/ITO/ZnO/CdS/CIAS/Mo/soda-lime glass structure were fabricated. The fill factor was seen to decrease while the product of short-circuit current and open-circuit voltage remained constant. The reverse saturation current increased when the Cu/III[sub]2nd ratio is greater than 1.3 which is a behavior of the surface roughness. Cu/III[sub]2nd ratios greater than 1.3 lead to the distant position of V-shape from the surface and the increase in surface roughness. Cu(In,Al)Se 2 (CIAS) thin films were prepared by a three-stage evaporation process. In this experiment, the composition ratio of Cu/(In+Al) at the end of the second stage (Cu/III 2nd) was changed from 1.1 to 1.7. The CIAS films showed an Al distribution with a V-shape profile. The valley depth of the V-shape from the surface increased with increasing the Cu/III 2nd ratio. The valleys of the V-shape for the films with the Cu/III 2nd ratio of 1.1–1.7 were located at approximately 0.3–1.0 μm from the film surface, respectively. The rms surface roughness increased from 40 nm for Cu/III 2nd=1.1 to 90 nm at Cu/III 2nd=1.3 and then saturated for greater Cu/III 2nd ratios. Solar cells with the Al/ITO/ZnO/CdS/CIAS/Mo/soda-lime glass structure were fabricated. The fill factor was seen to decrease while the product of short-circuit current and open-circuit voltage remained constant. The reverse saturation current increased when the Cu/III 2nd ratio is greater than 1.3 which is a behavior of the surface roughness. Cu/III 2nd ratios greater than 1.3 lead to the distant position of V-shape from the surface and the increase in surface roughness. |
Author | Forbes, Ian Araki, Tsutomu Yamada, Satoshi Zoppi, Guillaume Hayashi, Takao Minemoto, Takashi Takakura, Hideyuki Tanaka, Kiyoteru |
Author_xml | – sequence: 1 givenname: Takao surname: Hayashi fullname: Hayashi, Takao organization: College of Science and Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577, Japan – sequence: 2 givenname: Takashi surname: Minemoto fullname: Minemoto, Takashi email: minemoto@se.ritsumei.ac.jp organization: College of Science and Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577, Japan – sequence: 3 givenname: Guillaume surname: Zoppi fullname: Zoppi, Guillaume organization: Northumbria Photovoltaics Applications Centre, Northumbria University, Ellison Building, Newcastle upon Tyne NE1 8ST, UK – sequence: 4 givenname: Ian surname: Forbes fullname: Forbes, Ian organization: Northumbria Photovoltaics Applications Centre, Northumbria University, Ellison Building, Newcastle upon Tyne NE1 8ST, UK – sequence: 5 givenname: Kiyoteru surname: Tanaka fullname: Tanaka, Kiyoteru organization: College of Science and Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577, Japan – sequence: 6 givenname: Satoshi surname: Yamada fullname: Yamada, Satoshi organization: College of Science and Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577, Japan – sequence: 7 givenname: Tsutomu surname: Araki fullname: Araki, Tsutomu organization: College of Science and Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577, Japan – sequence: 8 givenname: Hideyuki surname: Takakura fullname: Takakura, Hideyuki organization: College of Science and Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577, Japan |
BookMark | eNqFkU1Lw0AQhhepYFv9Bx725AeYOLMbNxsEoZSqhYIH9bwkm1nZkmZrNvX3m1rPehoYHubjfSZs1IaWGDtHSBFQ3a7TGJpN2acCQKeIKUB-xMao8yKRstAjNoZC5AmITJ-wSYxrABBKZmN2v3CObM-D4zZstiH63oeWf3Rl7antuW_5fHe1bG9mzfUrccGHTWXHLTVNPGXHrmwinf3WKXt_XLzNn5PVy9NyPlslJGTWJ5ZEhorQKVdXTulC60qjyqGsyoIEIGRYVc6WVFNOlItM_bSVtI5QVHLKLg9zt1343FHszcbH_QVlS2EXTQFSoVYoB_LiT1JmmdBS6n9BAQpR3BUD-HAAaXjwy1Nnoh2CsVT7bsjN1MEbBLPXYNbmoMHsNRhEM2iQ351Efhs |
ContentType | Journal Article |
Copyright | 2008 Elsevier B.V. |
Copyright_xml | – notice: 2008 Elsevier B.V. |
DBID | 7QF 7SP 7TB 7U5 8FD FR3 JG9 L7M |
DOI | 10.1016/j.solmat.2008.11.007 |
DatabaseName | Aluminium Industry Abstracts Electronics & Communications Abstracts Mechanical & Transportation Engineering Abstracts Solid State and Superconductivity Abstracts Technology Research Database Engineering Research Database Materials Research Database Advanced Technologies Database with Aerospace |
DatabaseTitle | Materials Research Database Aluminium Industry Abstracts Technology Research Database Mechanical & Transportation Engineering Abstracts Electronics & Communications Abstracts Solid State and Superconductivity Abstracts Engineering Research Database Advanced Technologies Database with Aerospace |
DatabaseTitleList | Materials Research Database Materials Research Database |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering |
EISSN | 1879-3398 |
EndPage | 925 |
ExternalDocumentID | 9326622 S0927024808004029 |
GroupedDBID | --K --M .~1 0R~ 123 1B1 1~. 1~5 4.4 457 4G. 5VS 6OB 7-5 71M 8P~ 9JN AABNK AABXZ AACTN AAEDT AAEDW AAEPC AAHCO AAIAV AAIKJ AAKOC AALRI AAOAW AAQFI AAQXK AARJD AARLI AAXUO ABFNM ABMAC ABNUV ABXDB ABXRA ABYKQ ACDAQ ACGFS ACIWK ACNNM ACRLP ADBBV ADECG ADEWK ADEZE ADMUD AEBSH AEKER AENEX AEZYN AFKWA AFRAH AFRZQ AFTJW AFZHZ AGHFR AGUBO AGYEJ AHHHB AHIDL AHPOS AIEXJ AIKHN AITUG AJBFU AJOXV AJSZI AKURH ALMA_UNASSIGNED_HOLDINGS AMFUW AMRAJ ASPBG AVWKF AXJTR AZFZN BELTK BKOJK BLXMC CS3 DU5 EBS EFJIC EFLBG EJD ENUVR EO8 EO9 EP2 EP3 FDB FEDTE FGOYB FIRID FLBIZ FNPLU FYGXN G-2 G-Q GBLVA HVGLF HZ~ IHE J1W JARJE KOM LY6 LY7 M24 M41 MAGPM MO0 N9A O-L O9- OAUVE OZT P-8 P-9 PC. Q38 R2- RIG RNS ROL RPZ SAC SCB SDF SDG SDP SES SET SEW SMS SPC SPCBC SPD SSG SSK SSM SSR SSZ T5K TWZ WH7 WUQ XPP ZMT ~02 ~G- AAXKI AKRWK 7QF 7SP 7TB 7U5 8FD FR3 JG9 L7M |
ID | FETCH-LOGICAL-e234t-ce2416e1f6fdbf68988b81670aba9e201041bbfcaede7ee72469e20163cfe12b3 |
IEDL.DBID | AIKHN |
ISSN | 0927-0248 |
IngestDate | Fri Aug 16 04:51:07 EDT 2024 Sat Aug 17 00:52:40 EDT 2024 Sun Sep 29 07:35:56 EDT 2024 Fri Feb 23 02:35:07 EST 2024 |
IsPeerReviewed | true |
IsScholarly | true |
Issue | 6 |
Keywords | Cu(In,Al)Se 2 Three-stage process Band gap profile |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-LOGICAL-e234t-ce2416e1f6fdbf68988b81670aba9e201041bbfcaede7ee72469e20163cfe12b3 |
Notes | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
PQID | 20611259 |
PQPubID | 23500 |
PageCount | 4 |
ParticipantIDs | proquest_miscellaneous_903618613 proquest_miscellaneous_34428338 proquest_miscellaneous_20611259 elsevier_sciencedirect_doi_10_1016_j_solmat_2008_11_007 |
PublicationCentury | 2000 |
PublicationDate | 2009-06-01 |
PublicationDateYYYYMMDD | 2009-06-01 |
PublicationDate_xml | – month: 06 year: 2009 text: 2009-06-01 day: 01 |
PublicationDecade | 2000 |
PublicationTitle | Solar energy materials and solar cells |
PublicationYear | 2009 |
Publisher | Elsevier B.V |
Publisher_xml | – name: Elsevier B.V |
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SSID | ssj0002634 |
Score | 2.1365101 |
Snippet | Cu(In,Al)Se
2 (CIAS) thin films were prepared by a three-stage evaporation process. In this experiment, the composition ratio of Cu/(In+Al) at the end of the... Cu(In,Al)Se[sub]2 (CIAS) thin films were prepared by a three-stage evaporation process. In this experiment, the composition ratio of Cu/(In+Al) at the end of... |
SourceID | proquest elsevier |
SourceType | Aggregation Database Publisher |
StartPage | 922 |
SubjectTerms | Band gap profile Cu(In,Al)Se 2 Evaporation Q1 solar cells Solar energy Three-stage process valleys Zinc |
Title | Effect of composition gradient in Cu(In,Al)Se 2 solar cells |
URI | https://dx.doi.org/10.1016/j.solmat.2008.11.007 https://search.proquest.com/docview/20611259 https://search.proquest.com/docview/34428338 https://search.proquest.com/docview/903618613 |
Volume | 93 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV07T8MwED7RssCAeIryKB4YQCK0iR3HEVNVgQqILqVStyhOzqgIpahNV3475zxQQerCap0l-3z-7mx_dwa4TMmNmDhUTsKNcISf0p7zkdPGE6lJUj9Vxt5DvgzlYCyeJv5kA_p1LoylVVbYX2J6gdZVS6fSZudzOu2MuqHNpRK2MCJZohc2YJPckRBN2Ow9Pg-GP4DsyeJx2co7tkOdQVfQvGiFKTQsSZW2nKf9V3bFLf0B6MLrPOzCThUusl45oj3YwGwftleKCB7AXVmAmM0Ms_zwioTF3uYFmStn04z1l1eP2U3v43qEzGMLe5pl9sZ-cQjjh_vX_sCpvkRw0OMidxKkKUp0jTSpNlKFSmnlyqAb6zhE-7ItXK1NEmOKAWLg0enXNkueGHQ9zY-gmc0yPAbm-UkSaJ26sYmFRq5QKlSSc5SJiJVoQVCrIfq1IhGBbVSTw96jUoHld5Z0mCAFtuCi1lpExmrnE2c4Wy5ISFJ854frJbiwFeC4agFbIxGSz3UVRSEn_x7gKWyVj0L2MuUMmvl8iecUW-S6DY3bL7ddWdA3CtnPFQ |
link.rule.ids | 315,786,790,4521,24144,27955,27956,45618,45712 |
linkProvider | Elsevier |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV07T8MwED7xGIAB8RTl6YEBJEJJ7DiOmFAFanl0KUhsUZycURFKEW1Xfjt3eYiCxMJq3WCf7Xt-dwdwnJMacWlsvEw65akwpz8XoqSPp3KX5WFuHMchH_q6-6Run8PnOeg0tTAMq6xlfyXTS2ldr7Rrbrbfh8P24CLmWirFjRHpJQbxPCyyNcC4rvPPb5xHoMvUMlN7TN7Uz5UgL7pfMgwrSCU38-SpsjNK6Zd4LnXOzRqs1saiuKr2sw5zWGzAykwLwU24rNoPi5ETjA6vIVji5aOEck3EsBCd6UmvOLt6Ox2gCMSYfVnB8frxFjzdXD92ul49EMHDQKqJlyHpW42-0y63TpvYGGt8HV2kNo2R89rKt9ZlKeYYIUYB-b68rGXm0A-s3IaFYlTgDoggzLLI2txPXaosSoPaoNFSos5UalQLooYNyY_7SEjUJg007DWpGFgNsyRXghjYgqOGawk9VT5PWuBoOiYiTdZdGP9NIRX3f5OmBeIPipg0rm_IBtn99waPYKn7-HCf3Pf6d3uwXKWHOKyyDwuTjykekJUxsYflK_oC3nzP6g |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Effect+of+composition+gradient+in+Cu%28In%2CAl%29Se%5Bsub%5D2+solar+cells&rft.jtitle=Solar+energy+materials+and+solar+cells&rft.au=Hayashi%2C+Takao&rft.au=Minemoto%2C+Takashi&rft.au=Zoppi%2C+Guillaume&rft.au=bes%2C+Ian&rft.date=2009-06-01&rft.issn=0927-0248&rft.volume=93&rft.issue=6-7&rft.spage=922&rft.epage=925&rft_id=info:doi/10.1016%2Fj.solmat.2008.11.007&rft.externalDBID=NO_FULL_TEXT |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0927-0248&client=summon |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0927-0248&client=summon |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0927-0248&client=summon |