APA (7th ed.) Citation

Wang, Y., Tseng, L., Murmu, P. P., Bao, N., Kennedy, J., Ionesc, M., . . . Yi, J. (2017). Defects engineering induced room temperature ferromagnetism in transition metal doped MoS2. Materials & design, 121, 77-84. https://doi.org/10.1016/j.matdes.2017.02.037

Chicago Style (17th ed.) Citation

Wang, Yiren, et al. "Defects Engineering Induced Room Temperature Ferromagnetism in Transition Metal Doped MoS2." Materials & Design 121 (2017): 77-84. https://doi.org/10.1016/j.matdes.2017.02.037.

MLA (9th ed.) Citation

Wang, Yiren, et al. "Defects Engineering Induced Room Temperature Ferromagnetism in Transition Metal Doped MoS2." Materials & Design, vol. 121, 2017, pp. 77-84, https://doi.org/10.1016/j.matdes.2017.02.037.