Production of NiSi phase by grain boundary diffusion induced solid state reaction between Ni2Si and Si(100) substrate

• Published in: Applied surface science Vol. 320; pp. 627 - 633
• Main Authors: Shenouda, S.S., Langer, G.A., Katona, G.L., Daróczi, L., Csik, A., Beke, D.L.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 30.11.2014; Elsevier
• Subjects: Annealing; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Deposition; Evolution; Exact sciences and technology; Grain boundaries; Grain boundary diffusion; Nanostructures; Nickel silicide; Physics; Solid state reaction; Thin films; Transformations; Thin films; Grain boundary diffusion; Nanostructures; Solid state reaction; Silicon; Phase boundaries

Sketch of grain boundary diffusion of Si (blue) into Ni2Si film (yellow) forming NiSi (red). •New processing method for creation of homogeneous thin NiSi contacts from nanocrystalline-Ni2Si/Si(100) substrate.•The NiSi forms by grain-boundary diffusion and reaction in a certain low temperature-time a...