Dislocation reduction in large-diameter LEC GaAs growth: II. Microstructural characterization

• Published in: Journal of crystal growth Vol. 91; no. 4; pp. 567 - 575
• Main Authors: Kuwamoto, H., Holmes, D.E.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 1988; Elsevier
• Subjects: Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of crystal growth; physics of crystal growth; Physics; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation; Crystal growth; Semiconductor materials; Crystal orientation; Doping; Czochralski method; X ray topography; Experimental study; Inorganic compound; Dislocation; Gallium Arsenides; Mismatch lattice; Liquid encapsulation; Microstructure

Extensive microstructural characterization of undoped and isovalent (indium) doped, large diameter, semi-insulating GaAs crystals grown in a low gradient LEC configuration has been conducted. As indium is added to GaAs, a dramatic transition occurs in dislocation microstructure from cellular to axia...