Doping Free and Amorphous NiOx Film via UV Irradiation for Efficient Inverted Perovskite Solar Cells
High crystallization and conductivity are always required for inorganic carrier transport materials for cheap and high‐performance inverted perovskite solar cells (PSCs). High temperature and external doping are inevitably introduced and thus greatly hamper the applications of inorganic materials fo...
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Published in | Advanced science Vol. 9; no. 18; pp. e2201543 - n/a |
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Main Authors | , , , , , , , , , , |
Format | Journal Article |
Language | English |
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Weinheim
John Wiley & Sons, Inc
01.06.2022
John Wiley and Sons Inc Wiley |
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Abstract | High crystallization and conductivity are always required for inorganic carrier transport materials for cheap and high‐performance inverted perovskite solar cells (PSCs). High temperature and external doping are inevitably introduced and thus greatly hamper the applications of inorganic materials for mass production of flexible and tandem devices. Here, an amorphous and dopant‐free inorganic material, Ni3+‐rich NiOx, is reported to be fabricated by a novel UV irradiation strategy, which is facile, easily scaled‐up, and energy‐saving because all the processing temperatures are below 82 ℃. The as‐prepared NiOx film shows highly improved conductivity and hole extraction ability. The rigid and flexible PSCs present the champion efficiencies of 22.45% and 19.7%, respectively. This work fills the gap of preparing metal oxide films at the temperature below 150 °C for inverted PSCs with the high efficiency of >22%. More importantly, this work upgrades the substantial understanding about inorganic materials to function well as efficient carrier transport layers without external doping and high crystallization.
Fabrication of effective inorganic hole transport films at low temperature is crucial to move perovskite solar cells one step closer to mass production and then commercialization. Here, the authors report a photochemistry method to synthesize NiOx hole transport layer for perovskite solar cells with a champion performance of 22.45%. |
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AbstractList | Abstract High crystallization and conductivity are always required for inorganic carrier transport materials for cheap and high‐performance inverted perovskite solar cells (PSCs). High temperature and external doping are inevitably introduced and thus greatly hamper the applications of inorganic materials for mass production of flexible and tandem devices. Here, an amorphous and dopant‐free inorganic material, Ni3+‐rich NiOx, is reported to be fabricated by a novel UV irradiation strategy, which is facile, easily scaled‐up, and energy‐saving because all the processing temperatures are below 82 ℃. The as‐prepared NiOx film shows highly improved conductivity and hole extraction ability. The rigid and flexible PSCs present the champion efficiencies of 22.45% and 19.7%, respectively. This work fills the gap of preparing metal oxide films at the temperature below 150 °C for inverted PSCs with the high efficiency of >22%. More importantly, this work upgrades the substantial understanding about inorganic materials to function well as efficient carrier transport layers without external doping and high crystallization. High crystallization and conductivity are always required for inorganic carrier transport materials for cheap and high-performance inverted perovskite solar cells (PSCs). High temperature and external doping are inevitably introduced and thus greatly hamper the applications of inorganic materials for mass production of flexible and tandem devices. Here, an amorphous and dopant-free inorganic material, Ni3+ -rich NiOx , is reported to be fabricated by a novel UV irradiation strategy, which is facile, easily scaled-up, and energy-saving because all the processing temperatures are below 82 ℃. The as-prepared NiOx film shows highly improved conductivity and hole extraction ability. The rigid and flexible PSCs present the champion efficiencies of 22.45% and 19.7%, respectively. This work fills the gap of preparing metal oxide films at the temperature below 150 °C for inverted PSCs with the high efficiency of >22%. More importantly, this work upgrades the substantial understanding about inorganic materials to function well as efficient carrier transport layers without external doping and high crystallization.High crystallization and conductivity are always required for inorganic carrier transport materials for cheap and high-performance inverted perovskite solar cells (PSCs). High temperature and external doping are inevitably introduced and thus greatly hamper the applications of inorganic materials for mass production of flexible and tandem devices. Here, an amorphous and dopant-free inorganic material, Ni3+ -rich NiOx , is reported to be fabricated by a novel UV irradiation strategy, which is facile, easily scaled-up, and energy-saving because all the processing temperatures are below 82 ℃. The as-prepared NiOx film shows highly improved conductivity and hole extraction ability. The rigid and flexible PSCs present the champion efficiencies of 22.45% and 19.7%, respectively. This work fills the gap of preparing metal oxide films at the temperature below 150 °C for inverted PSCs with the high efficiency of >22%. More importantly, this work upgrades the substantial understanding about inorganic materials to function well as efficient carrier transport layers without external doping and high crystallization. High crystallization and conductivity are always required for inorganic carrier transport materials for cheap and high‐performance inverted perovskite solar cells (PSCs). High temperature and external doping are inevitably introduced and thus greatly hamper the applications of inorganic materials for mass production of flexible and tandem devices. Here, an amorphous and dopant‐free inorganic material, Ni3+‐rich NiOx, is reported to be fabricated by a novel UV irradiation strategy, which is facile, easily scaled‐up, and energy‐saving because all the processing temperatures are below 82 ℃. The as‐prepared NiOx film shows highly improved conductivity and hole extraction ability. The rigid and flexible PSCs present the champion efficiencies of 22.45% and 19.7%, respectively. This work fills the gap of preparing metal oxide films at the temperature below 150 °C for inverted PSCs with the high efficiency of >22%. More importantly, this work upgrades the substantial understanding about inorganic materials to function well as efficient carrier transport layers without external doping and high crystallization. Fabrication of effective inorganic hole transport films at low temperature is crucial to move perovskite solar cells one step closer to mass production and then commercialization. Here, the authors report a photochemistry method to synthesize NiOx hole transport layer for perovskite solar cells with a champion performance of 22.45%. High crystallization and conductivity are always required for inorganic carrier transport materials for cheap and high‐performance inverted perovskite solar cells (PSCs). High temperature and external doping are inevitably introduced and thus greatly hamper the applications of inorganic materials for mass production of flexible and tandem devices. Here, an amorphous and dopant‐free inorganic material, Ni 3+ ‐rich NiO x , is reported to be fabricated by a novel UV irradiation strategy, which is facile, easily scaled‐up, and energy‐saving because all the processing temperatures are below 82 ℃. The as‐prepared NiO x film shows highly improved conductivity and hole extraction ability. The rigid and flexible PSCs present the champion efficiencies of 22.45% and 19.7%, respectively. This work fills the gap of preparing metal oxide films at the temperature below 150 °C for inverted PSCs with the high efficiency of >22%. More importantly, this work upgrades the substantial understanding about inorganic materials to function well as efficient carrier transport layers without external doping and high crystallization. Fabrication of effective inorganic hole transport films at low temperature is crucial to move perovskite solar cells one step closer to mass production and then commercialization. Here, the authors report a photochemistry method to synthesize NiO x hole transport layer for perovskite solar cells with a champion performance of 22.45%. High crystallization and conductivity are always required for inorganic carrier transport materials for cheap and high‐performance inverted perovskite solar cells (PSCs). High temperature and external doping are inevitably introduced and thus greatly hamper the applications of inorganic materials for mass production of flexible and tandem devices. Here, an amorphous and dopant‐free inorganic material, Ni3+‐rich NiOx, is reported to be fabricated by a novel UV irradiation strategy, which is facile, easily scaled‐up, and energy‐saving because all the processing temperatures are below 82 ℃. The as‐prepared NiOx film shows highly improved conductivity and hole extraction ability. The rigid and flexible PSCs present the champion efficiencies of 22.45% and 19.7%, respectively. This work fills the gap of preparing metal oxide films at the temperature below 150 °C for inverted PSCs with the high efficiency of >22%. More importantly, this work upgrades the substantial understanding about inorganic materials to function well as efficient carrier transport layers without external doping and high crystallization. |
Author | Cheng, Chun Zhang, Xian Shi, Run Lian, Qing Li, Dongyang Mi, Guojun Zhang, Liang Wang, Guoliang Huang, Yulan Wang, Peng‐lai Amini, Abbas |
AuthorAffiliation | 2 School of Chemistry and Molecular Engineering East China Normal University Shanghai 200062 China 1 Department of Materials Science and Engineering Southern University of Science and Technology Shenzhen Guangdong Province 518055 China 3 Center for Infrastructure Engineering Western Sydney University Kingswood NSW 2751 Australia |
AuthorAffiliation_xml | – name: 3 Center for Infrastructure Engineering Western Sydney University Kingswood NSW 2751 Australia – name: 1 Department of Materials Science and Engineering Southern University of Science and Technology Shenzhen Guangdong Province 518055 China – name: 2 School of Chemistry and Molecular Engineering East China Normal University Shanghai 200062 China |
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Snippet | High crystallization and conductivity are always required for inorganic carrier transport materials for cheap and high‐performance inverted perovskite solar... High crystallization and conductivity are always required for inorganic carrier transport materials for cheap and high-performance inverted perovskite solar... Abstract High crystallization and conductivity are always required for inorganic carrier transport materials for cheap and high‐performance inverted perovskite... |
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SubjectTerms | Contact angle green synthesis inverted perovskite solar cells Morphology Nanocrystals NiOx photochemistry synthesis Scanning electron microscopy Spectrum analysis Ultraviolet radiation UV irradiation |
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Title | Doping Free and Amorphous NiOx Film via UV Irradiation for Efficient Inverted Perovskite Solar Cells |
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