Robustness of magnetic and electric domains against charge carrier doping in multiferroic hexagonal ErMnO3
We investigate the effect of chemical doping on the electric and magnetic domain pattern in multiferroic hexagonal ErMnO3. Hole- and electron doping are achieved through the growth of Er1−xCaxMnO3 and Er1−xZrxMnO3 single crystals, which allows for a controlled introduction of divalent and tetravalen...
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Published in | New journal of physics Vol. 18; no. 4; pp. 043015 - 43020 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
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Bristol
IOP Publishing
12.04.2016
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Abstract | We investigate the effect of chemical doping on the electric and magnetic domain pattern in multiferroic hexagonal ErMnO3. Hole- and electron doping are achieved through the growth of Er1−xCaxMnO3 and Er1−xZrxMnO3 single crystals, which allows for a controlled introduction of divalent and tetravalent ions, respectively. Using conductance measurements, piezoresponse force microscopy and nonlinear optics we study doping-related variations in the electronic transport and image the corrsponding ferroelectric and antiferromagnetic domains. We find that moderate doping levels allow for adjusting the electronic conduction properties of ErMnO3 without destroying its characteristic domain patterns. Our findings demonstrate the feasibility of chemical doping for non-perturbative property-engineering of intrinsic domain states in this important class of multiferroics. |
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AbstractList | We investigate the effect of chemical doping on the electric and magnetic domain pattern in multiferroic hexagonal ErMnO3. Hole- and electron doping are achieved through the growth of Er1−x Ca x MnO3 and Er1−x Zr x MnO3 single crystals, which allows for a controlled introduction of divalent and tetravalent ions, respectively. Using conductance measurements, piezoresponse force microscopy and nonlinear optics we study doping-related variations in the electronic transport and image the corrsponding ferroelectric and antiferromagnetic domains. We find that moderate doping levels allow for adjusting the electronic conduction properties of ErMnO3 without destroying its characteristic domain patterns. Our findings demonstrate the feasibility of chemical doping for non-perturbative property-engineering of intrinsic domain states in this important class of multiferroics. We investigate the effect of chemical doping on the electric and magnetic domain pattern in multiferroic hexagonal ErMnO _3 . Hole- and electron doping are achieved through the growth of Er _1− _x Ca _x MnO _3 and Er _1− _x Zr _x MnO _3 single crystals, which allows for a controlled introduction of divalent and tetravalent ions, respectively. Using conductance measurements, piezoresponse force microscopy and nonlinear optics we study doping-related variations in the electronic transport and image the corrsponding ferroelectric and antiferromagnetic domains. We find that moderate doping levels allow for adjusting the electronic conduction properties of ErMnO _3 without destroying its characteristic domain patterns. Our findings demonstrate the feasibility of chemical doping for non-perturbative property-engineering of intrinsic domain states in this important class of multiferroics. We investigate the effect of chemical doping on the electric and magnetic domain pattern in multiferroic hexagonal ErMnO3. Hole- and electron doping are achieved through the growth of Er1−xCaxMnO3 and Er1−xZrxMnO3 single crystals, which allows for a controlled introduction of divalent and tetravalent ions, respectively. Using conductance measurements, piezoresponse force microscopy and nonlinear optics we study doping-related variations in the electronic transport and image the corrsponding ferroelectric and antiferromagnetic domains. We find that moderate doping levels allow for adjusting the electronic conduction properties of ErMnO3 without destroying its characteristic domain patterns. Our findings demonstrate the feasibility of chemical doping for non-perturbative property-engineering of intrinsic domain states in this important class of multiferroics. |
Author | Bourret, E Fiebig, M Meier, D Hassanpour, E Wegmayr, V Lottermoser, Th Yan, Z Schaab, J |
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Snippet | We investigate the effect of chemical doping on the electric and magnetic domain pattern in multiferroic hexagonal ErMnO3. Hole- and electron doping are... We investigate the effect of chemical doping on the electric and magnetic domain pattern in multiferroic hexagonal ErMnO _3 . Hole- and electron doping are... |
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SubjectTerms | Antiferromagnetism Current carriers domain engineering Doping Electron transport Ferroelectric materials Ferroelectricity Magnetic domains Manganese oxides Multiferroic materials multiferroics Nonlinear optics Organic chemistry Physics piezoresponse force microscopy Resistance second harmonic generation Single crystals Zirconium |
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Title | Robustness of magnetic and electric domains against charge carrier doping in multiferroic hexagonal ErMnO3 |
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