Ultra‐High Performance Amorphous Ga2O3 Photodetector Arrays for Solar‐Blind Imaging

The growing demand for scalable solar‐blind image sensors with remarkable photosensitive properties has stimulated the research on more advanced solar‐blind photodetector (SBPD) arrays. In this work, the authors demonstrate ultrahigh‐performance metal‐semiconductor‐metal (MSM) SBPDs based on amorpho...

Full description

Saved in:
Bibliographic Details
Published inAdvanced science Vol. 8; no. 20
Main Authors Qin, Yuan, Li, Li‐Heng, Yu, Zhaoan, Wu, Feihong, Dong, Danian, Guo, Wei, Zhang, Zhongfang, Yuan, Jun‐Hui, Xue, Kan‐Hao, Miao, Xiangshui, Long, Shibing
Format Journal Article
LanguageEnglish
Published Weinheim John Wiley & Sons, Inc 01.10.2021
John Wiley and Sons Inc
Wiley
Subjects
Online AccessGet full text

Cover

Loading…
Abstract The growing demand for scalable solar‐blind image sensors with remarkable photosensitive properties has stimulated the research on more advanced solar‐blind photodetector (SBPD) arrays. In this work, the authors demonstrate ultrahigh‐performance metal‐semiconductor‐metal (MSM) SBPDs based on amorphous (a‐) Ga2O3 via a post‐annealing process. The post‐annealed MSM a‐Ga2O3 SBPDs exhibit superhigh sensitivity of 733 A/W and high response speed of 18 ms, giving a high gain‐bandwidth product over 104 at 5 V. The SBPDs also show ultrahigh photo‐to‐dark current ratio of 3.9 × 107. Additionally, the PDs demonstrate super‐high specific detectivity of 3.9 × 1016 Jones owing to the extremely low noise down to 3.5 fW Hz−1/2, suggesting high signal‐to‐noise ratio. Underlying mechanism for such superior photoelectric properties is revealed by Kelvin probe force microscopy and first principles calculation. Furthermore, for the first time, a large‐scale, high‐uniformity 32 × 32 image sensor array based on the post‐annealed a‐Ga2O3 SBPDs is fabricated. Clear image of target object with high contrast can be obtained thanks to the high sensitivity and uniformity of the array. These results demonstrate the feasibility and practicality of the Ga2O3 PDs for applications in solar‐blind imaging, environmental monitoring, artificial intelligence and machine vision. Ultraviolet imaging technology is widely used in meteorology, medical science, and military science. For the first time, a high‐uniformity 32 × 32 solar‐blind image sensor array with outstanding imaging capability is demonstrated based on high‐performance Ga2O3 photodetectors. Schottky barrier lowering effect is experimentally revealed to attribute to the internal gain mechanism.
AbstractList The growing demand for scalable solar‐blind image sensors with remarkable photosensitive properties has stimulated the research on more advanced solar‐blind photodetector (SBPD) arrays. In this work, the authors demonstrate ultrahigh‐performance metal‐semiconductor‐metal (MSM) SBPDs based on amorphous (a‐) Ga2O3 via a post‐annealing process. The post‐annealed MSM a‐Ga2O3 SBPDs exhibit superhigh sensitivity of 733 A/W and high response speed of 18 ms, giving a high gain‐bandwidth product over 104 at 5 V. The SBPDs also show ultrahigh photo‐to‐dark current ratio of 3.9 × 107. Additionally, the PDs demonstrate super‐high specific detectivity of 3.9 × 1016 Jones owing to the extremely low noise down to 3.5 fW Hz−1/2, suggesting high signal‐to‐noise ratio. Underlying mechanism for such superior photoelectric properties is revealed by Kelvin probe force microscopy and first principles calculation. Furthermore, for the first time, a large‐scale, high‐uniformity 32 × 32 image sensor array based on the post‐annealed a‐Ga2O3 SBPDs is fabricated. Clear image of target object with high contrast can be obtained thanks to the high sensitivity and uniformity of the array. These results demonstrate the feasibility and practicality of the Ga2O3 PDs for applications in solar‐blind imaging, environmental monitoring, artificial intelligence and machine vision.
The growing demand for scalable solar‐blind image sensors with remarkable photosensitive properties has stimulated the research on more advanced solar‐blind photodetector (SBPD) arrays. In this work, the authors demonstrate ultrahigh‐performance metal‐semiconductor‐metal (MSM) SBPDs based on amorphous ( a ‐) Ga 2 O 3 via a post‐annealing process. The post‐annealed MSM a ‐Ga 2 O 3 SBPDs exhibit superhigh sensitivity of 733 A/W and high response speed of 18 ms, giving a high gain‐bandwidth product over 10 4 at 5 V. The SBPDs also show ultrahigh photo‐to‐dark current ratio of 3.9 × 10 7 . Additionally, the PDs demonstrate super‐high specific detectivity of 3.9 × 10 16 Jones owing to the extremely low noise down to 3.5 fW Hz −1/2 , suggesting high signal‐to‐noise ratio. Underlying mechanism for such superior photoelectric properties is revealed by Kelvin probe force microscopy and first principles calculation. Furthermore, for the first time, a large‐scale, high‐uniformity 32 × 32 image sensor array based on the post‐annealed a ‐Ga 2 O 3 SBPDs is fabricated. Clear image of target object with high contrast can be obtained thanks to the high sensitivity and uniformity of the array. These results demonstrate the feasibility and practicality of the Ga 2 O 3 PDs for applications in solar‐blind imaging, environmental monitoring, artificial intelligence and machine vision. Ultraviolet imaging technology is widely used in meteorology, medical science, and military science. For the first time, a high‐uniformity 32 × 32 solar‐blind image sensor array with outstanding imaging capability is demonstrated based on high‐performance Ga 2 O 3 photodetectors. Schottky barrier lowering effect is experimentally revealed to attribute to the internal gain mechanism.
The growing demand for scalable solar‐blind image sensors with remarkable photosensitive properties has stimulated the research on more advanced solar‐blind photodetector (SBPD) arrays. In this work, the authors demonstrate ultrahigh‐performance metal‐semiconductor‐metal (MSM) SBPDs based on amorphous (a‐) Ga2O3 via a post‐annealing process. The post‐annealed MSM a‐Ga2O3 SBPDs exhibit superhigh sensitivity of 733 A/W and high response speed of 18 ms, giving a high gain‐bandwidth product over 104 at 5 V. The SBPDs also show ultrahigh photo‐to‐dark current ratio of 3.9 × 107. Additionally, the PDs demonstrate super‐high specific detectivity of 3.9 × 1016 Jones owing to the extremely low noise down to 3.5 fW Hz−1/2, suggesting high signal‐to‐noise ratio. Underlying mechanism for such superior photoelectric properties is revealed by Kelvin probe force microscopy and first principles calculation. Furthermore, for the first time, a large‐scale, high‐uniformity 32 × 32 image sensor array based on the post‐annealed a‐Ga2O3 SBPDs is fabricated. Clear image of target object with high contrast can be obtained thanks to the high sensitivity and uniformity of the array. These results demonstrate the feasibility and practicality of the Ga2O3 PDs for applications in solar‐blind imaging, environmental monitoring, artificial intelligence and machine vision. Ultraviolet imaging technology is widely used in meteorology, medical science, and military science. For the first time, a high‐uniformity 32 × 32 solar‐blind image sensor array with outstanding imaging capability is demonstrated based on high‐performance Ga2O3 photodetectors. Schottky barrier lowering effect is experimentally revealed to attribute to the internal gain mechanism.
Abstract The growing demand for scalable solar‐blind image sensors with remarkable photosensitive properties has stimulated the research on more advanced solar‐blind photodetector (SBPD) arrays. In this work, the authors demonstrate ultrahigh‐performance metal‐semiconductor‐metal (MSM) SBPDs based on amorphous (a‐) Ga2O3 via a post‐annealing process. The post‐annealed MSM a‐Ga2O3 SBPDs exhibit superhigh sensitivity of 733 A/W and high response speed of 18 ms, giving a high gain‐bandwidth product over 104 at 5 V. The SBPDs also show ultrahigh photo‐to‐dark current ratio of 3.9 × 107. Additionally, the PDs demonstrate super‐high specific detectivity of 3.9 × 1016 Jones owing to the extremely low noise down to 3.5 fW Hz−1/2, suggesting high signal‐to‐noise ratio. Underlying mechanism for such superior photoelectric properties is revealed by Kelvin probe force microscopy and first principles calculation. Furthermore, for the first time, a large‐scale, high‐uniformity 32 × 32 image sensor array based on the post‐annealed a‐Ga2O3 SBPDs is fabricated. Clear image of target object with high contrast can be obtained thanks to the high sensitivity and uniformity of the array. These results demonstrate the feasibility and practicality of the Ga2O3 PDs for applications in solar‐blind imaging, environmental monitoring, artificial intelligence and machine vision.
Author Wu, Feihong
Miao, Xiangshui
Qin, Yuan
Yuan, Jun‐Hui
Dong, Danian
Guo, Wei
Xue, Kan‐Hao
Zhang, Zhongfang
Yu, Zhaoan
Long, Shibing
Li, Li‐Heng
AuthorAffiliation 2 School of Microelectronics University of Science and Technology of China Hefei Anhui 230026 China
1 Key Laboratory of Microelectronics Devices & Integration Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China
3 Wuhan National Laboratory for Optoelectronics School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan 430074 China
AuthorAffiliation_xml – name: 2 School of Microelectronics University of Science and Technology of China Hefei Anhui 230026 China
– name: 1 Key Laboratory of Microelectronics Devices & Integration Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China
– name: 3 Wuhan National Laboratory for Optoelectronics School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan 430074 China
Author_xml – sequence: 1
  givenname: Yuan
  surname: Qin
  fullname: Qin, Yuan
  organization: University of Science and Technology of China
– sequence: 2
  givenname: Li‐Heng
  surname: Li
  fullname: Li, Li‐Heng
  organization: Huazhong University of Science and Technology
– sequence: 3
  givenname: Zhaoan
  surname: Yu
  fullname: Yu, Zhaoan
  organization: Institute of Microelectronics of Chinese Academy of Sciences
– sequence: 4
  givenname: Feihong
  surname: Wu
  fullname: Wu, Feihong
  organization: University of Science and Technology of China
– sequence: 5
  givenname: Danian
  surname: Dong
  fullname: Dong, Danian
  organization: Institute of Microelectronics of Chinese Academy of Sciences
– sequence: 6
  givenname: Wei
  surname: Guo
  fullname: Guo, Wei
  organization: University of Science and Technology of China
– sequence: 7
  givenname: Zhongfang
  surname: Zhang
  fullname: Zhang, Zhongfang
  organization: University of Science and Technology of China
– sequence: 8
  givenname: Jun‐Hui
  surname: Yuan
  fullname: Yuan, Jun‐Hui
  organization: Huazhong University of Science and Technology
– sequence: 9
  givenname: Kan‐Hao
  surname: Xue
  fullname: Xue, Kan‐Hao
  email: xkh@hust.edu.cn
  organization: Huazhong University of Science and Technology
– sequence: 10
  givenname: Xiangshui
  surname: Miao
  fullname: Miao, Xiangshui
  organization: Huazhong University of Science and Technology
– sequence: 11
  givenname: Shibing
  orcidid: 0000-0001-6220-4461
  surname: Long
  fullname: Long, Shibing
  email: shibinglong@ustc.edu.cn
  organization: University of Science and Technology of China
BookMark eNpV0cFO3DAQBmCroiqUcu05Us9LZ2zHsS-VtrTASkggAe3RcpxxNqsk3jpZ0N76CH1GnoTQRQhOtuzfnzT-P7K9PvbE2GeEYwTgX111Nxxz4AiIoN6xA45Gz4SWcu_Vfp8dDcMKADAXhUT9ge0LKcz0rDhgv2_bMbmHv__Om3qZXVEKMXWu95TNu5jWy7gZsjPHL0V2tYxjrGgkP8aUzVNy2yGb0tl1bF2ahO9t01fZonN109ef2Pvg2oGOntdDdnv68-bkfHZxebY4mV_MKqENnxGZPIgCFSEWGPJcKQWKCtKylKXxhkMoodLgykBBYRVKF3yuNAX0xnBxyBY7t4puZdep6Vza2uga-_8gptq6NDa-JRuQgyy1zgX3Ekg7CMrz3Ac0qL3Ayfq2s9absqPKUz99TfsGfXvTN0tbxzurc26k1hPw5RlI8c-GhtGu4ib10_yW51oUWggwU0ruUvdNS9sXHsE-lWqfSrUvpdr5j1_X3CAXj8p3mVs
ContentType Journal Article
Copyright 2021 The Authors. Advanced Science published by Wiley‐VCH GmbH
2021. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.
Copyright_xml – notice: 2021 The Authors. Advanced Science published by Wiley‐VCH GmbH
– notice: 2021. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.
DBID 24P
3V.
7XB
88I
8FK
8G5
ABUWG
AFKRA
AZQEC
BENPR
CCPQU
DWQXO
GNUQQ
GUQSH
HCIFZ
M2O
M2P
MBDVC
PHGZM
PHGZT
PIMPY
PKEHL
PQEST
PQQKQ
PQUKI
PRINS
Q9U
5PM
DOA
DOI 10.1002/advs.202101106
DatabaseName Wiley Online Library Open Access
ProQuest Central (Corporate)
ProQuest Central (purchase pre-March 2016)
Science Database (Alumni Edition)
ProQuest Central (Alumni) (purchase pre-March 2016)
ProQuest Research Library
ProQuest Central (Alumni)
ProQuest Central UK/Ireland
ProQuest Central Essentials
ProQuest Central
ProQuest One Community College
ProQuest Central
ProQuest Central Student
ProQuest Research Library
SciTech Premium Collection
Research Library
Science Database
Research Library (Corporate)
ProQuest Central Premium
ProQuest One Academic
Publicly Available Content Database
ProQuest One Academic Middle East (New)
ProQuest One Academic Eastern Edition (DO NOT USE)
ProQuest One Academic
ProQuest One Academic UKI Edition
ProQuest Central China
ProQuest Central Basic
PubMed Central (Full Participant titles)
DOAJ Directory of Open Access Journals
DatabaseTitle Publicly Available Content Database
Research Library Prep
ProQuest Science Journals (Alumni Edition)
ProQuest Central Student
ProQuest One Academic Middle East (New)
ProQuest Central Basic
ProQuest Central Essentials
ProQuest Science Journals
ProQuest One Academic Eastern Edition
ProQuest Central (Alumni Edition)
SciTech Premium Collection
ProQuest One Community College
Research Library (Alumni Edition)
ProQuest Central China
ProQuest Central
ProQuest One Academic UKI Edition
ProQuest Central Korea
ProQuest Research Library
ProQuest Central (New)
ProQuest One Academic
ProQuest One Academic (New)
ProQuest Central (Alumni)
DatabaseTitleList Publicly Available Content Database



Database_xml – sequence: 1
  dbid: DOA
  name: DOAJ Directory of Open Access Journals
  url: https://www.doaj.org/
  sourceTypes: Open Website
– sequence: 2
  dbid: 24P
  name: Wiley Online Library Open Access
  url: https://authorservices.wiley.com/open-science/open-access/browse-journals.html
  sourceTypes: Publisher
– sequence: 3
  dbid: BENPR
  name: ProQuest Central
  url: https://www.proquest.com/central
  sourceTypes: Aggregation Database
DeliveryMethod fulltext_linktorsrc
Discipline Sciences (General)
EISSN 2198-3844
EndPage n/a
ExternalDocumentID oai_doaj_org_article_f1204b88532c40e8a0f6c25cf1918c31
PMC8529488
ADVS2912
Genre article
GrantInformation_xml – fundername: Chinese Academy of Sciences
  funderid: XDB44000000
– fundername: Institute of Microelectronics of CAS
– fundername: Ministry of Science and Technology of the People's Republic of China
  funderid: 2018YFB0406504; 2016YFA0201803
– fundername: Key Area Research and Development Program of Guangdong Province
  funderid: 2020B010174002
– fundername: Key Laboratory of Microelectronics Devices & Integration Technology
– fundername: National Natural Science Foundation of China
  funderid: 61925110; U20A20207; 11704134; 61821091; 51961145110
– fundername: Key Laboratory of Nanodevices and Applications in Suzhou Institute of Nano‐Tech and Nano‐Bionics of CAS
– fundername: CAS Key Laboratory of Receptor Research
  funderid: QYZDB‐SSW‐JSC048
– fundername: Key Area Research and Development Program of Guangdong Province
  grantid: 2020B010174002
– fundername: ;
  grantid: 61925110; U20A20207; 11704134; 61821091; 51961145110
– fundername: ;
  grantid: 2018YFB0406504; 2016YFA0201803
– fundername: ;
  grantid: QYZDB‐SSW‐JSC048
– fundername: ;
  grantid: XDB44000000
GroupedDBID 0R~
1OC
24P
53G
5VS
88I
8G5
AAFWJ
AAHHS
AAZKR
ABDBF
ABUWG
ACCFJ
ACCMX
ACGFS
ACUHS
ACXQS
ADBBV
ADKYN
ADZMN
ADZOD
AEEZP
AEQDE
AFBPY
AFKRA
AIWBW
AJBDE
ALMA_UNASSIGNED_HOLDINGS
ALUQN
AOIJS
AVUZU
AZQEC
BCNDV
BENPR
BPHCQ
BRXPI
CCPQU
DWQXO
EBS
GNUQQ
GODZA
GROUPED_DOAJ
GUQSH
HCIFZ
HYE
IAO
ITC
KQ8
M2O
M2P
O9-
OK1
PIMPY
PQQKQ
PROAC
ROL
RPM
WIN
3V.
7XB
8FK
AAMMB
ADMLS
AEFGJ
AFPKN
AGXDD
AIDQK
AIDYY
IGS
MBDVC
PHGZM
PHGZT
PKEHL
PQEST
PQUKI
PRINS
Q9U
5PM
PUEGO
ID FETCH-LOGICAL-d3892-ee95f3716e1171f5566606e7e84b4b9c920fb0d80abfef61dfbafc568ef1c9923
IEDL.DBID 24P
ISSN 2198-3844
IngestDate Wed Aug 27 01:30:20 EDT 2025
Thu Aug 21 18:26:00 EDT 2025
Fri Jul 25 06:20:26 EDT 2025
Wed Jan 22 16:27:12 EST 2025
IsDoiOpenAccess true
IsOpenAccess true
IsPeerReviewed true
IsScholarly true
Issue 20
Language English
License Attribution
This is an open access article under the terms of the http://creativecommons.org/licenses/by/4.0/ License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-d3892-ee95f3716e1171f5566606e7e84b4b9c920fb0d80abfef61dfbafc568ef1c9923
Notes ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
ORCID 0000-0001-6220-4461
OpenAccessLink https://onlinelibrary.wiley.com/doi/abs/10.1002%2Fadvs.202101106
PMID 34390217
PQID 2583783309
PQPubID 4365299
PageCount 10
ParticipantIDs doaj_primary_oai_doaj_org_article_f1204b88532c40e8a0f6c25cf1918c31
pubmedcentral_primary_oai_pubmedcentral_nih_gov_8529488
proquest_journals_2583783309
wiley_primary_10_1002_advs_202101106_ADVS2912
PublicationCentury 2000
PublicationDate 2021-10-01
PublicationDateYYYYMMDD 2021-10-01
PublicationDate_xml – month: 10
  year: 2021
  text: 2021-10-01
  day: 01
PublicationDecade 2020
PublicationPlace Weinheim
PublicationPlace_xml – name: Weinheim
– name: Hoboken
PublicationTitle Advanced science
PublicationYear 2021
Publisher John Wiley & Sons, Inc
John Wiley and Sons Inc
Wiley
Publisher_xml – name: John Wiley & Sons, Inc
– name: John Wiley and Sons Inc
– name: Wiley
References 2017; 5
2021; 8
2019; 7
2013; 25
2017; 2
2021; 42
2019; 6
2019; 5
2017; 4
2019; 31
2020; 41
2019; 11
2017; 27
2010; 464
2007; 91
2020; 14
2014; 24
2017; 29
1962; 33
2013; 7
2008; 1
2021; 72
2014; 297
2007; 75
2013; 8
2017; 9
2011; 110
2020; 8
2018; 6
2020; 7
2014; 105
2015; 27
2014; 4
2018; 5
2019; 40
2020
2019; 29
2018; 30
1999; 74
2017; 121
2018; 12
2010; 2
2017; 542
2001; 79
2012; 85
References_xml – volume: 27
  year: 2017
  publication-title: Adv. Funct. Mater.
– volume: 41
  start-page: 997
  year: 2020
  publication-title: IEEE Electron Device Lett.
– volume: 24
  start-page: 53
  year: 2014
  publication-title: Adv. Funct. Mater.
– volume: 91
  year: 2007
  publication-title: Appl. Phys. Lett.
– volume: 105
  year: 2014
  publication-title: Appl. Phys. Lett.
– volume: 7
  start-page: 812
  year: 2020
  publication-title: ACS Photonics
– volume: 464
  start-page: 80
  year: 2010
  publication-title: Nature
– volume: 6
  start-page: 1026
  year: 2019
  publication-title: ACS Photonics
– volume: 110
  year: 2011
  publication-title: J. Appl. Phys.
– volume: 8
  year: 2020
  publication-title: Adv. Opt. Mater.
– volume: 27
  start-page: 6575
  year: 2015
  publication-title: Adv. Mater.
– volume: 542
  start-page: 324
  year: 2017
  publication-title: Nature
– volume: 74
  start-page: 3401
  year: 1999
  publication-title: Appl. Phys. Lett.
– volume: 2
  year: 2017
  publication-title: Nat. Energy
– volume: 33
  start-page: 205
  year: 1962
  publication-title: J. Appl. Phys.
– volume: 8
  start-page: 952
  year: 2013
  publication-title: Nat. Nanotechnol.
– volume: 29
  year: 2019
  publication-title: Adv. Funct. Mater.
– volume: 5
  year: 2019
  publication-title: Adv. Electron. Mater.
– volume: 9
  start-page: 1
  year: 2017
  publication-title: IEEE Photonics J.
– volume: 33
  start-page: 1733
  year: 1962
  publication-title: J. Appl. Phys.
– volume: 42
  start-page: 383
  year: 2021
  publication-title: IEEE Electron Device Lett.
– volume: 297
  start-page: 125
  year: 2014
  publication-title: Appl. Surf. Sci.
– volume: 25
  start-page: 867
  year: 2013
  publication-title: Adv. Mater.
– volume: 27
  start-page: 3921
  year: 2015
  publication-title: Adv. Mater.
– volume: 7
  start-page: 752
  year: 2013
  publication-title: Nat. Photonics
– volume: 1
  year: 2008
  publication-title: Appl. Phys. Express
– volume: 40
  start-page: 1483
  year: 2019
  publication-title: IEEE Electron Device Lett.
– volume: 75
  year: 2007
  publication-title: Phys. Rev. B
– volume: 6
  year: 2018
  publication-title: Adv. Opt. Mater.
– volume: 29
  year: 2017
  publication-title: Adv. Mater.
– volume: 8
  start-page: 557
  year: 2021
  publication-title: ACS Photonics
– volume: 42
  start-page: 545
  year: 2021
  publication-title: IEEE Electron Device Lett.
– volume: 85
  year: 2012
  publication-title: Phys. Rev. B
– volume: 5
  start-page: 2391
  year: 2018
  publication-title: ACS Photonics
– volume: 31
  start-page: 923
  year: 2019
  publication-title: IEEE Photonics Technol. Lett.
– volume: 7
  start-page: 2557
  year: 2019
  publication-title: J. Mater. Chem. C
– volume: 30
  start-page: 2025
  year: 2018
  publication-title: IEEE Photonics Technol. Lett.
– volume: 2
  year: 2017
  publication-title: Nat. Rev. Mater.
– volume: 12
  year: 2018
  publication-title: ACS Nano
– volume: 2
  start-page: 1973
  year: 2010
  publication-title: ACS Appl. Mater. Interfaces
– volume: 30
  start-page: 993
  year: 2018
  publication-title: IEEE Photonics Technol. Lett.
– volume: 40
  start-page: 742
  year: 2019
  publication-title: IEEE Electron Device Lett.
– volume: 4
  start-page: 1067
  year: 2014
  publication-title: Opt. Mater. Express
– volume: 11
  year: 2019
  publication-title: ACS Appl. Mater. Interfaces
– volume: 9
  year: 2017
  publication-title: ACS Appl. Mater. Interfaces
– year: 2020
  publication-title: ACS Appl. Electron. Mater.
– volume: 7
  year: 2019
  publication-title: APL Mater.
– volume: 30
  year: 2018
  publication-title: Adv. Mater.
– volume: 5
  year: 2017
  publication-title: Adv. Opt. Mater.
– volume: 79
  start-page: 1417
  year: 2001
  publication-title: Appl. Phys. Lett.
– volume: 4
  start-page: 2203
  year: 2017
  publication-title: ACS Photonics
– volume: 14
  year: 2020
  publication-title: Mater. Today Phys.
– volume: 40
  start-page: 1475
  year: 2019
  publication-title: IEEE Electron Device Lett.
– volume: 72
  start-page: 189
  year: 2021
  publication-title: J. Mater. Sci. Technol.
– volume: 121
  year: 2017
  publication-title: J. Appl. Phys.
SSID ssj0001537418
Score 2.5677104
Snippet The growing demand for scalable solar‐blind image sensors with remarkable photosensitive properties has stimulated the research on more advanced solar‐blind...
Abstract The growing demand for scalable solar‐blind image sensors with remarkable photosensitive properties has stimulated the research on more advanced...
SourceID doaj
pubmedcentral
proquest
wiley
SourceType Open Website
Open Access Repository
Aggregation Database
Publisher
SubjectTerms Ga2O3
high detectivity
image sensors
Light
Molecular beam epitaxy
Morphology
Organic chemicals
photodetector arrays
Scanning electron microscopy
Semiconductors
Sensors
solar‐blind imaging
Spectrum analysis
uniformity
SummonAdditionalLinks – databaseName: DOAJ Directory of Open Access Journals
  dbid: DOA
  link: http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwrV3JTsMwELVQT1wQZRFlkw8c4BDhjJ3UOQJilVgkqOBmOV5UJNqitiBx4xP4Rr6EsZNCy4UL1ySeJDN25r1o5pmQHc4Ft94WiUVwkQjtRSIFL5G1Wq7B5FZGdf3Lq_ysIy4esoeprb5CTVglD1w5bt-nwEQpMauAEcxJzXxuIDMeiYY0sYMaMOdNkamqP5gHWZaJSiODfW1fgzo3MhxMeBOF_hlY-bsochqsxmxzskgWaphID6rHa5I5118izXohjuhurRa9t0zuO09o6PP9I1Rs0JufPgB60BugE5HZ01MN15zedAfjgXXj-J8eTQ_124ji1fQ20Fu0cIiQ09LzXty4aIV0To7vjs6SereExCLogMS5IvMc6Y9L03bqM8RpSE5c20lRirIwBTBfMiuZLr3zeWp9qb3Jcul8agrEeauk0R_03RqhufDoQACMrxbSSm2Z8CGR41DgzrTIYfCeeq4EMVSQqI4HMHCqDpz6K3AtsjnxvarXzUhBFgTuOWdFi7Rn4jFzs9kz_cdu1MWWGRT4PWqRJEbue0SlzAwqTAH1PQUU5v1bKFJY_4-32SDzwXJV5rdJGuPhi9tCuDIut-PM_AKkmOm9
  priority: 102
  providerName: Directory of Open Access Journals
– databaseName: ProQuest Central
  dbid: BENPR
  link: http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1LT8MwDLZgXLggnmK8lAMHOFS0SdqlJ8QQTwmYgAluUZoHIMEK20Dixk_gN_JLcLqMMQ5c2yatbNf-7LqfATYZ48w4k0cGwUXEleOR4KzArNUwRXVmRMWuf3aeHbf56W16GwpuvdBWOfSJlaM2pfY18h2aeupzzL7z3eeXyE-N8l9XwwiNSZhCFyxEDaaaB-ety1GVJWWenmXI1hjTHWXePEs3ZjoY-IZM_WPw8m9z5G_QWkWdw1mYCXCR7A30OwcTtjMPc-GF7JGtwBq9vQA37Ufc6Ovj03dukNbofwCy91SiMDHDJ0eKXjDSui_7pbH9ql6PW3fVe4_g1eTKp7m4QxOhpyEnT9UAo0VoHx5c7x9HYWpCZBB80MjaPHUM0yCbJI3EpYjXMEmxDSt4wYtc5zR2RWxErApnXZYYVyin00xYl-gc8d4S1Dplxy4DybhDAVKKelZcGKFMzJ0P6LiUMqvr0PTSk88DYgzpqaqrA2X3TgbLly6hMS8EwgKqeWyFil2maaodZopCs6QOa0PZy_D-9ORI23VojOlj7GbjZzoP9xU_tkhpjn6pDlGluZ8VA4ZmKr0JyB8TkBj_r2ie0JX_H2QVpv2aQSPfGtT63Ve7joCkX2wEq_sGLszjbQ
  priority: 102
  providerName: ProQuest
Title Ultra‐High Performance Amorphous Ga2O3 Photodetector Arrays for Solar‐Blind Imaging
URI https://onlinelibrary.wiley.com/doi/abs/10.1002%2Fadvs.202101106
https://www.proquest.com/docview/2583783309
https://pubmed.ncbi.nlm.nih.gov/PMC8529488
https://doaj.org/article/f1204b88532c40e8a0f6c25cf1918c31
Volume 8
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1LbxMxELagvXBBLQ8RaCMfOJTDqt6xd-M9Jn1QUFsiQkRvlp8tEs1WSVqJGz-B38gv6di7TbrcOK3ktWelGc_6-6zxZ0Lecy64C67KHIKLTOggMim4QdbquAZbOpnU9c_Oy5Op-HxRXDw6xd_oQ6w23GJmpP91THBtFvtr0VDt7qLcNlIWXMHKp2Qznq-NRX0gxutdloJHeZZ4wxyy64xLIR6UGxnsd020qv0dqPlvoeRjAJtWoOMt8ryFjnTYxHqbPPGzF2S7Tc4F3WsVpD-8JN-nP9HQ399_YhUHHa_PBtDhdY2ORbZPP2r4wun4ql7Wzi_T3j2anutfC4q96SRSXrQwQkc5-uk6XWb0ikyPj74dnGTtDQqZQyACmfdVEThSIp_ngzwUiN2QsPiBl8IIU9kKWDDMSaZN8KHMXTA62KKUPuS2Quz3mmzM6pl_Q2gpAjoTAGOuhXRSOyZCXNxxKHBve2QUvaduGpEMFWWrU0M9v1RtFqiQAxNGIkQAK5iXmoXSQmEDskZped4jOw--V20uLRQUUfSec1b1yKATj87Hum9mP66SVrYsoMJ_VI9kKXKrEY1aM6g4BdRqCijEAhOocnj7n_3fkWexsany2yEby_mt30W0sjT9NCH7ZHN4eHY6wefo6Hz8tZ-4_z3mZ-qF
linkProvider Wiley-Blackwell
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwtV3NbtQwEB5V2wNcEOVHLBTwASQ4RE3GTtY5INSFll3aLivaFb0Zxz8UiW7K7hbUG4_Ak_BQPAnj_HRZDtx6TWInGn8Zf2OPvwF4wrng1ts8skQuIqG9iKTgBUWtlms0mZWVuv7BKBtMxNvj9HgNfrVnYUJaZesTK0dtSxPWyLcwDdLnFH3nL8--RqFqVNhdbUto1LDYcxffKWSbvxi-pvF9iri7c_RqEDVVBSJLkzNGzuWp5xQmuCTpJT4lPkMk3vWcFIUocpNj7IvYylgX3vkssb7Q3qSZdD4xeR6EDsjlrwuexdiB9f7OaPx-uaqT8iAH06pDxril7begCk6RFU20bWWAFTr7bzLm3yS5muV2b8KNhp6y7RpPG7Dmprdgo3EAc_asUal-fhs-TL5QR79__AyZImy8PH_Atk9LGrzyfM7eaHzH2fikXJTWLar9Aep6pi_mjJ5mhyGsph76RHUtG55WBZPuwORK7HkXOtNy6u4By4QnAyISrrSQVmobCx8IBDVF7kwX-sF66qwW4lBBGru6UM4-qeZPUz7BWBSSaAgaETupY58ZTI2nyFQannRhs7W9av7XuVqiqwu9lfFYednqnennk0qPW6aYkx_sQlSN3GWLWhEaVYCAuoSAIr5xiHmC9___IY_h2uDoYF_tD0d7D-B6aF8nEW5CZzE7dw-JDC2KRw0CGXy8atD_AWv8IP0
linkToPdf http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwtV3NbtQwEB5VW6nigigFsVDAB5DgEG1iO1n7gFCXdulSWFaUFb0Zxz8UiW7KZgvqjUfo8_RxeBLG-emyHLj1msRONP4y_sYefwPwhDHOrLcyskguIq49jwRnOUatlmlqMisqdf1342x_yt8cpUdrcNmehQlpla1PrBy1LUxYI-_RNEifY_Qte75Ji5jsDl-efo9CBamw09qW06ghcuDOf2L4Vr4Y7eJYP6V0uPfx1X7UVBiILE7UNHJOpp5hyOCSpJ_4FLkNEnrXd4LnPJdG0tjnsRWxzr3zWWJ9rr1JM-F8YqQMogfo_tf7ISrqwPpgbzz5sFzhSVmQhmmVImPa0_ZHUAjHKAsn3bZKwAq1_Tcx82_CXM14w1tws6GqZKfG1iasudlt2GycQUmeNYrVz7fg0_QbdvT710XIGiGT5VkEsnNS4EAWZyV5rel7RibHxaKwblHtFWDXc31eEnyaHIYQG3sYIO21ZHRSFU-6A9Nrsedd6MyKmbsHJOMeDUgpYkxzYYW2MfeBTGBTypzpwiBYT53WohwqyGRXF4r5F9X8dconNOa5QEpCDY-d0LHPDE2NxyhVGJZ0Ybu1vWr-3VItkdaF_sp4rLxs9c7s63GlzS1SKtEndiGqRu6qRa0OTVWAgLqCgELucUhlQu___0MewwaCXb0djQ8ewI3QvM4n3IbOYn7mHiIvWuSPGgAS-HzdmP8DeeolMg
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Ultra%E2%80%90High+Performance+Amorphous+Ga2O3+Photodetector+Arrays+for+Solar%E2%80%90Blind+Imaging&rft.jtitle=Advanced+science&rft.au=Qin%2C+Yuan&rft.au=Li%2C+Li%E2%80%90Heng&rft.au=Yu%2C+Zhaoan&rft.au=Wu%2C+Feihong&rft.date=2021-10-01&rft.pub=John+Wiley+and+Sons+Inc&rft.eissn=2198-3844&rft.volume=8&rft.issue=20&rft_id=info:doi/10.1002%2Fadvs.202101106&rft_id=info%3Apmid%2F34390217&rft.externalDocID=PMC8529488
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=2198-3844&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=2198-3844&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=2198-3844&client=summon