Is the Bandgap of Bulk PdSe2 Located Truly in the Far‐Infrared Region? Determination by Fourier‐Transform Photocurrent Spectroscopy

• Published in: Advanced photonics research Vol. 3; no. 11
• Main Authors: Nishiyama, Wataru, Nishimura, Tomonori, Nishioka, Masao, Ueno, Keiji, Iwamoto, Satoshi, Nagashio, Kosuke
• Format: Journal Article
• Language: English
• Published: Hoboken John Wiley & Sons, Inc 01.11.2022; Wiley-VCH
• Subjects: bandgap determinations; Crystals; Electrons; Fourier-transform photocurrent spectroscopy; Graphene; Light; noble metal dichalcogenides; photothermoelectric effects; photovoltaic effects; Physical properties; Radiation; Semiconductors; Spectrum analysis

2D bulk PdSe2, a group 10 noble metal dichalcogenide, is recognized as a newly found far‐infrared material with a bandgap energy (E G) of ≈0.05 eV and thus has attracted much attention as an optoelectronic material. However, the bandgap energy of bulk PdSe2 is the subject of a controversial debate a...