On the Enhanced p‐Type Performance of Back‐Gated WS2 Devices

• Published in: Advanced electronic materials Vol. 11; no. 13
• Main Authors: Marquez, Carlos, Gity, Farzan, Galdon, Jose C., Martinez, Alberto, Salazar, Norberto, Ansari, Lida, Neill, Hazel, Donetti, Luca, Lorenzo, Francisco, Caño‐Garcia, Manuel, Ortega, Ruben, Navarro, Carlos, Sampedro, Carlos, Hurley, Paul K., Gamiz, Francisco
• Format: Journal Article
• Language: English
• Published: Wiley-VCH 20.08.2025
• Subjects: 2D materials; chemical vapor deposition (CVD); density functional theory (DFT); P‐type transistors; tungsten disulfide (WS2)

In this work, a scalable technique is presented for the direct growth of tungsten disulfide (WS2) utilized in back‐gated field‐effect transistors (FETs), demonstrating robust and persistent p‐type behavior across diverse conditions. Notably, this p‐type behavior is consistently observed regardless o...