Physics of Ferroelectric Wurtzite Al1−xScxN Thin Films

• Published in: Advanced electronic materials Vol. 11; no. 2
• Main Author: Yang, Feng
• Format: Journal Article
• Language: English
• Published: Wiley-VCH 01.02.2025
• Subjects: Al1−xScxN; ferroelectric memory; III‐nitride semiconductor; thin film; wurtzite ferroelectric

Al1−xScxN emerges as a revolutionary ferroelectric material within the III‐N family. It combines exceptional switchable polarization (80–165 µC cm−2), highly tunable coercive fields (1.5–6.5 MV cm−¹), and a wide bandgap (4.9–5.6 eV). Unlike conventional ferroelectrics, Al1−xScxN exhibits remarkable...