Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD‐Grown Single Crystalline Al0.85Sc0.15N

• Published in: Advanced Physics Research Vol. 3; no. 5
• Main Authors: Wolff, Niklas, Schönweger, Georg, Streicher, Isabel, Islam, Md Redwanul, Braun, Nils, Straňák, Patrik, Kirste, Lutz, Prescher, Mario, Lotnyk, Andriy, Kohlstedt, Hermann, Leone, Stefano, Kienle, Lorenz, Fichtner, Simon
• Format: Journal Article
• Language: English
• Published: Edinburgh John Wiley & Sons, Inc 01.05.2024; Wiley-VCH
• Subjects: AlScN; Chemical composition; Coercivity; Crystal structure; Crystallography; Domain walls; Electric fields; Electrons; Ferroelectric materials; Ferroelectricity; Ferroelectrics; Grain boundaries; Heterostructures; III‐nitrides; Image quality; Mass spectrometry; Metalorganic chemical vapor deposition; Molecular beam epitaxy; nanostructure; Organic chemicals; Organic chemistry; Polarization; Scanning transmission electron microscopy; Secondary ion mass spectrometry; Single crystals; Solid solutions; STEM; Thickness; Thin films; Transmission electron microscopy; Unit cell; Wurtzite; wurtzite ferroelectrics

Wurtzite‐type Al1−xScxN solid solutions grown by metal organic chemical vapor deposition are for the first time confirmed to be ferroelectric. The film with 230 nm thickness and x = 0.15 exhibits a coercive field of 5.5 MV cm−1 at a measurement frequency of 1.5 kHz. The single crystal quality and ho...