Highly efficient emission and high-CRI warm white light-emitting diodes from ligand-modified CsPbBr3 quantum dots
All-inorganic CsPbBr3 perovskite quantum dots (QDs) have received great attention in white light emission because of their outstanding properties. However, their practical application is hindered by poor stability. Herein, we propose a simple strategy to synthesize excellent stability and efficient...
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Published in | Opto-Electronic Advances Vol. 5; no. 1; pp. 35 - 48 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Key Laboratory of Optoelectronic Technology&Systems(Ministry of Education),Chongqing University,Chongqing 400044,China%Department of Physics,Southern University of Science and Technology,Shenzhen 518055,China
2022
Institue of Optics and Electronics, Chinese Academy of Sciences |
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Abstract | All-inorganic CsPbBr3 perovskite quantum dots (QDs) have received great attention in white light emission because of their outstanding properties. However, their practical application is hindered by poor stability. Herein, we propose a simple strategy to synthesize excellent stability and efficient emission of CsPbBr3 QDs by using 2-hexyldecanoic acid (DA) as a ligand to replace the regular oleic acid (OA) ligand. Thanks to the strong binding energy between DA ligand and QDs, the modified QDs not only show a high photoluminescence quantum yield (PLQY) of 96% but also exhibit high stability against ethanol and water. Thereby warm white light-emitting diodes (WLEDs) are constructed by combining lig-and modified CsPbBr3 QDs with red AgInZnS QDs on blue emitting InGaN chips, exhibiting a color rendering index of 93, a power efficiency of 64.8 lm/W, a CIE coordinate of (0.44, 0.42) and correlated color temperature value of 3018 K. In ad-dition, WLEDs based on ligand modified CsPbBr3 QDs also exhibit better thermal performance than that of WLEDs based on the regular CsPbBr3 QDs. The combination of improved efficiency and better thermal stability with high color quality indicates that the modified CsPbBr3 QDs are ideal for WLEDs application. |
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AbstractList | All-inorganic CsPbBr3 perovskite quantum dots (QDs) have received great attention in white light emission because of their outstanding properties. However, their practical application is hindered by poor stability. Herein, we propose a simple strategy to synthesize excellent stability and efficient emission of CsPbBr3 QDs by using 2-hexyldecanoic acid (DA) as a ligand to replace the regular oleic acid (OA) ligand. Thanks to the strong binding energy between DA ligand and QDs, the modified QDs not only show a high photoluminescence quantum yield (PLQY) of 96% but also exhibit high stability against ethanol and water. Thereby warm white light-emitting diodes (WLEDs) are constructed by combining ligand modified CsPbBr3 QDs with red AgInZnS QDs on blue emitting InGaN chips, exhibiting a color rendering index of 93, a power efficiency of 64.8 lm/W, a CIE coordinate of (0.44, 0.42) and correlated color temperature value of 3018 K. In addition, WLEDs based on ligand modified CsPbBr3 QDs also exhibit better thermal performance than that of WLEDs based on the regular CsPbBr3 QDs. The combination of improved efficiency and better thermal stability with high color quality indicates that the modified CsPbBr3 QDs are ideal for WLEDs application. All-inorganic CsPbBr3 perovskite quantum dots (QDs) have received great attention in white light emission because of their outstanding properties. However, their practical application is hindered by poor stability. Herein, we propose a simple strategy to synthesize excellent stability and efficient emission of CsPbBr3 QDs by using 2-hexyldecanoic acid (DA) as a ligand to replace the regular oleic acid (OA) ligand. Thanks to the strong binding energy between DA ligand and QDs, the modified QDs not only show a high photoluminescence quantum yield (PLQY) of 96% but also exhibit high stability against ethanol and water. Thereby warm white light-emitting diodes (WLEDs) are constructed by combining lig-and modified CsPbBr3 QDs with red AgInZnS QDs on blue emitting InGaN chips, exhibiting a color rendering index of 93, a power efficiency of 64.8 lm/W, a CIE coordinate of (0.44, 0.42) and correlated color temperature value of 3018 K. In ad-dition, WLEDs based on ligand modified CsPbBr3 QDs also exhibit better thermal performance than that of WLEDs based on the regular CsPbBr3 QDs. The combination of improved efficiency and better thermal stability with high color quality indicates that the modified CsPbBr3 QDs are ideal for WLEDs application. |
Author | Yubo Zhang Dongdong Yan Zhigang Zang Shuangyi Zhao Huaxin Wang |
AuthorAffiliation | Key Laboratory of Optoelectronic Technology&Systems(Ministry of Education),Chongqing University,Chongqing 400044,China%Department of Physics,Southern University of Science and Technology,Shenzhen 518055,China |
AuthorAffiliation_xml | – name: Key Laboratory of Optoelectronic Technology&Systems(Ministry of Education),Chongqing University,Chongqing 400044,China%Department of Physics,Southern University of Science and Technology,Shenzhen 518055,China |
Author_xml | – sequence: 1 fullname: Dongdong Yan – sequence: 2 fullname: Shuangyi Zhao – sequence: 3 fullname: Yubo Zhang – sequence: 4 fullname: Huaxin Wang – sequence: 5 fullname: Zhigang Zang |
BookMark | eNotkM1v2zAMxXXogHVZ7zvqtpMzSbY-fOyCrQ1QYMOwnQ3apBwFsdTYCoL0r6_SDgRI4D3yhwd-YjcxRWLsixRr1QplviWCtRJKlSaE1TfsVonWVI227Ud2tyz7IiunjW3tLTs-hnF3uHDyPgyBYuY0hWUJKXKIyHfFrTZ_tvwM88TPu5CJH4qWq7KWc4gjx5CQFu7nNF2tclVNCYMPhHyz_O6_zzU_niDm08Qx5eUz--DhsNDd_7li_37--Lt5rJ5-PWw3908VKl3nalBUO-tQIHrQqKAnI1qnBieM7LEm2VgyhE2NvZbQeKGsaZzzpQbX63rFtu9cTLDvnucwwXzpEoTuTUjz2MGcw3CgTtNQ-NI0RtsGXA3eSdlb1CAUSOcK6-s76wzRQxy7fTrNsaTvRty_dHR9t5BCNPUriBF4Vg |
ContentType | Journal Article |
Copyright | Copyright © Wanfang Data Co. Ltd. All Rights Reserved. |
Copyright_xml | – notice: Copyright © Wanfang Data Co. Ltd. All Rights Reserved. |
DBID | 2B. 4A8 92I 93N PSX TCJ DOA |
DOI | 10.29026/oea.2022.200075 |
DatabaseName | Wanfang Data Journals - Hong Kong WANFANG Data Centre Wanfang Data Journals 万方数据期刊 - 香港版 China Online Journals (COJ) China Online Journals (COJ) DOAJ Directory of Open Access Journals |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: DOA name: DOAJ Directory of Open Access Journals url: https://www.doaj.org/ sourceTypes: Open Website |
DeliveryMethod | fulltext_linktorsrc |
EndPage | 48 |
ExternalDocumentID | oai_doaj_org_article_5ec2ab1646574a83af811b7d5a02a188 gdjz_e202201004 |
GroupedDBID | -SI -S~ 2B. 4A8 8FE 8FG 92I 93N AAXDM ABJCF ABUWG AFKRA ALMA_UNASSIGNED_HOLDINGS BENPR BGLVJ BPHCQ BVBZV CAJEI CCPQU GROUPED_DOAJ HCIFZ L6V M7S PHGZM PHGZT PIMPY PMFND PQQKQ PROAC PSX PTHSS Q-- TCJ TGT U1G U5S AAFWJ AFPKN |
ID | FETCH-LOGICAL-d253t-c2e3878d0ddfa5d2abe60982c8061bd3e147e6ed43db51a4f0276488f8f8c8b53 |
IEDL.DBID | DOA |
ISSN | 2096-4579 |
IngestDate | Wed Aug 27 00:24:46 EDT 2025 Thu May 29 04:00:24 EDT 2025 |
IsDoiOpenAccess | true |
IsOpenAccess | true |
IsPeerReviewed | true |
IsScholarly | true |
Issue | 1 |
Keywords | white light-emitting diodes efficiency CsPbBr3 quantum dots ligand modification stability |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-LOGICAL-d253t-c2e3878d0ddfa5d2abe60982c8061bd3e147e6ed43db51a4f0276488f8f8c8b53 |
OpenAccessLink | https://doaj.org/article/5ec2ab1646574a83af811b7d5a02a188 |
PageCount | 14 |
ParticipantIDs | doaj_primary_oai_doaj_org_article_5ec2ab1646574a83af811b7d5a02a188 wanfang_journals_gdjz_e202201004 |
PublicationCentury | 2000 |
PublicationDate | 2022 2022-01-01 |
PublicationDateYYYYMMDD | 2022-01-01 |
PublicationDate_xml | – year: 2022 text: 2022 |
PublicationDecade | 2020 |
PublicationTitle | Opto-Electronic Advances |
PublicationTitle_FL | Opto-Electronic Advances |
PublicationYear | 2022 |
Publisher | Key Laboratory of Optoelectronic Technology&Systems(Ministry of Education),Chongqing University,Chongqing 400044,China%Department of Physics,Southern University of Science and Technology,Shenzhen 518055,China Institue of Optics and Electronics, Chinese Academy of Sciences |
Publisher_xml | – name: Key Laboratory of Optoelectronic Technology&Systems(Ministry of Education),Chongqing University,Chongqing 400044,China%Department of Physics,Southern University of Science and Technology,Shenzhen 518055,China – name: Institue of Optics and Electronics, Chinese Academy of Sciences |
SSID | ssj0002856797 |
Score | 2.543927 |
Snippet | All-inorganic CsPbBr3 perovskite quantum dots (QDs) have received great attention in white light emission because of their outstanding properties. However,... |
SourceID | doaj wanfang |
SourceType | Open Website Aggregation Database |
StartPage | 35 |
SubjectTerms | cspbbr3 quantum dots efficiency ligand modification stability white light-emitting diodes |
Title | Highly efficient emission and high-CRI warm white light-emitting diodes from ligand-modified CsPbBr3 quantum dots |
URI | https://d.wanfangdata.com.cn/periodical/gdjz-e202201004 https://doaj.org/article/5ec2ab1646574a83af811b7d5a02a188 |
Volume | 5 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwrZ1LS8NAEIAX8eRFFBXriz14XZpknznaYqmCImKht7DJ7paWNtU-KPrrndnk0JsXyS2bFzNZZmZ35htC7m0uqlyGiikpAhNaB5aDX8KkMlIHLJ-JO7ovr2o4Es9jOd5r9YU5YQ0euBFcV_oqsyVSsKQW1nAbTJqW2kmbZDY1scwXbN5eMDWLS0ZS6dhZBQYVE1LnzR5llkPQ0V16RA5lEUSZYIph5PXHup062HqyZ2IGJ-S49Q3pQ_NNp-TA12fkCzMx5t_UR9YDmAiKHdpwjYva2lHEDbP--xPd2dWC7nBTgM4jHAQuiznN1E2Xzq8pFpLgENzFFks3DeB80v76reytOP3agoS3Cwox6vqcjAaPH_0ha_skMJdJvmFV5rnRxiXOBSsdiMurJDdZZcBYl477VGivvBPclTK1IkAoqmDiBjgqU0p-QQ7rZe0vCVUm4VVIE48grsxDOFQGY22aVtZbzV2H9FBSxWeDwigQTh1PgMqKVmXFXyrrENrKuWgnzLqYuNlP4VEnCTLsrv7jPdfkCB_YLJjckMPNautvwYXYlHfxb_kFXLfCUg |
linkProvider | Directory of Open Access Journals |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Highly+efficient+emission+and+high-CRI+warm+white+light-emitting+diodes+from+ligand-modified+CsPbBr3+quantum+dots&rft.jtitle=%E5%85%89%E7%94%B5%E8%BF%9B%E5%B1%95%EF%BC%88%E8%8B%B1%E6%96%87%E7%89%88%EF%BC%89&rft.au=Dongdong+Yan&rft.au=Shuangyi+Zhao&rft.au=Yubo+Zhang&rft.au=Huaxin+Wang&rft.date=2022&rft.pub=Key+Laboratory+of+Optoelectronic+Technology%26Systems%28Ministry+of+Education%29%2CChongqing+University%2CChongqing+400044%2CChina%25Department+of+Physics%2CSouthern+University+of+Science+and+Technology%2CShenzhen+518055%2CChina&rft.issn=2096-4579&rft.volume=5&rft.issue=1&rft.spage=35&rft.epage=48&rft_id=info:doi/10.29026%2Foea.2022.200075&rft.externalDocID=gdjz_e202201004 |
thumbnail_s | http://utb.summon.serialssolutions.com/2.0.0/image/custom?url=http%3A%2F%2Fwww.wanfangdata.com.cn%2Fimages%2FPeriodicalImages%2Fgdjz-e%2Fgdjz-e.jpg |