Highly efficient emission and high-CRI warm white light-emitting diodes from ligand-modified CsPbBr3 quantum dots

All-inorganic CsPbBr3 perovskite quantum dots (QDs) have received great attention in white light emission because of their outstanding properties. However, their practical application is hindered by poor stability. Herein, we propose a simple strategy to synthesize excellent stability and efficient...

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Published inOpto-Electronic Advances Vol. 5; no. 1; pp. 35 - 48
Main Authors Dongdong Yan, Shuangyi Zhao, Yubo Zhang, Huaxin Wang, Zhigang Zang
Format Journal Article
LanguageEnglish
Published Key Laboratory of Optoelectronic Technology&Systems(Ministry of Education),Chongqing University,Chongqing 400044,China%Department of Physics,Southern University of Science and Technology,Shenzhen 518055,China 2022
Institue of Optics and Electronics, Chinese Academy of Sciences
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Abstract All-inorganic CsPbBr3 perovskite quantum dots (QDs) have received great attention in white light emission because of their outstanding properties. However, their practical application is hindered by poor stability. Herein, we propose a simple strategy to synthesize excellent stability and efficient emission of CsPbBr3 QDs by using 2-hexyldecanoic acid (DA) as a ligand to replace the regular oleic acid (OA) ligand. Thanks to the strong binding energy between DA ligand and QDs, the modified QDs not only show a high photoluminescence quantum yield (PLQY) of 96% but also exhibit high stability against ethanol and water. Thereby warm white light-emitting diodes (WLEDs) are constructed by combining lig-and modified CsPbBr3 QDs with red AgInZnS QDs on blue emitting InGaN chips, exhibiting a color rendering index of 93, a power efficiency of 64.8 lm/W, a CIE coordinate of (0.44, 0.42) and correlated color temperature value of 3018 K. In ad-dition, WLEDs based on ligand modified CsPbBr3 QDs also exhibit better thermal performance than that of WLEDs based on the regular CsPbBr3 QDs. The combination of improved efficiency and better thermal stability with high color quality indicates that the modified CsPbBr3 QDs are ideal for WLEDs application.
AbstractList All-inorganic CsPbBr3 perovskite quantum dots (QDs) have received great attention in white light emission because of their outstanding properties. However, their practical application is hindered by poor stability. Herein, we propose a simple strategy to synthesize excellent stability and efficient emission of CsPbBr3 QDs by using 2-hexyldecanoic acid (DA) as a ligand to replace the regular oleic acid (OA) ligand. Thanks to the strong binding energy between DA ligand and QDs, the modified QDs not only show a high photoluminescence quantum yield (PLQY) of 96% but also exhibit high stability against ethanol and water. Thereby warm white light-emitting diodes (WLEDs) are constructed by combining ligand modified CsPbBr3 QDs with red AgInZnS QDs on blue emitting InGaN chips, exhibiting a color rendering index of 93, a power efficiency of 64.8 lm/W, a CIE coordinate of (0.44, 0.42) and correlated color temperature value of 3018 K. In addition, WLEDs based on ligand modified CsPbBr3 QDs also exhibit better thermal performance than that of WLEDs based on the regular CsPbBr3 QDs. The combination of improved efficiency and better thermal stability with high color quality indicates that the modified CsPbBr3 QDs are ideal for WLEDs application.
All-inorganic CsPbBr3 perovskite quantum dots (QDs) have received great attention in white light emission because of their outstanding properties. However, their practical application is hindered by poor stability. Herein, we propose a simple strategy to synthesize excellent stability and efficient emission of CsPbBr3 QDs by using 2-hexyldecanoic acid (DA) as a ligand to replace the regular oleic acid (OA) ligand. Thanks to the strong binding energy between DA ligand and QDs, the modified QDs not only show a high photoluminescence quantum yield (PLQY) of 96% but also exhibit high stability against ethanol and water. Thereby warm white light-emitting diodes (WLEDs) are constructed by combining lig-and modified CsPbBr3 QDs with red AgInZnS QDs on blue emitting InGaN chips, exhibiting a color rendering index of 93, a power efficiency of 64.8 lm/W, a CIE coordinate of (0.44, 0.42) and correlated color temperature value of 3018 K. In ad-dition, WLEDs based on ligand modified CsPbBr3 QDs also exhibit better thermal performance than that of WLEDs based on the regular CsPbBr3 QDs. The combination of improved efficiency and better thermal stability with high color quality indicates that the modified CsPbBr3 QDs are ideal for WLEDs application.
Author Yubo Zhang
Dongdong Yan
Zhigang Zang
Shuangyi Zhao
Huaxin Wang
AuthorAffiliation Key Laboratory of Optoelectronic Technology&Systems(Ministry of Education),Chongqing University,Chongqing 400044,China%Department of Physics,Southern University of Science and Technology,Shenzhen 518055,China
AuthorAffiliation_xml – name: Key Laboratory of Optoelectronic Technology&Systems(Ministry of Education),Chongqing University,Chongqing 400044,China%Department of Physics,Southern University of Science and Technology,Shenzhen 518055,China
Author_xml – sequence: 1
  fullname: Dongdong Yan
– sequence: 2
  fullname: Shuangyi Zhao
– sequence: 3
  fullname: Yubo Zhang
– sequence: 4
  fullname: Huaxin Wang
– sequence: 5
  fullname: Zhigang Zang
BookMark eNotkM1v2zAMxXXogHVZ7zvqtpMzSbY-fOyCrQ1QYMOwnQ3apBwFsdTYCoL0r6_SDgRI4D3yhwd-YjcxRWLsixRr1QplviWCtRJKlSaE1TfsVonWVI227Ud2tyz7IiunjW3tLTs-hnF3uHDyPgyBYuY0hWUJKXKIyHfFrTZ_tvwM88TPu5CJH4qWq7KWc4gjx5CQFu7nNF2tclVNCYMPhHyz_O6_zzU_niDm08Qx5eUz--DhsNDd_7li_37--Lt5rJ5-PWw3908VKl3nalBUO-tQIHrQqKAnI1qnBieM7LEm2VgyhE2NvZbQeKGsaZzzpQbX63rFtu9cTLDvnucwwXzpEoTuTUjz2MGcw3CgTtNQ-NI0RtsGXA3eSdlb1CAUSOcK6-s76wzRQxy7fTrNsaTvRty_dHR9t5BCNPUriBF4Vg
ContentType Journal Article
Copyright Copyright © Wanfang Data Co. Ltd. All Rights Reserved.
Copyright_xml – notice: Copyright © Wanfang Data Co. Ltd. All Rights Reserved.
DBID 2B.
4A8
92I
93N
PSX
TCJ
DOA
DOI 10.29026/oea.2022.200075
DatabaseName Wanfang Data Journals - Hong Kong
WANFANG Data Centre
Wanfang Data Journals
万方数据期刊 - 香港版
China Online Journals (COJ)
China Online Journals (COJ)
DOAJ Directory of Open Access Journals
DatabaseTitleList

Database_xml – sequence: 1
  dbid: DOA
  name: DOAJ Directory of Open Access Journals
  url: https://www.doaj.org/
  sourceTypes: Open Website
DeliveryMethod fulltext_linktorsrc
EndPage 48
ExternalDocumentID oai_doaj_org_article_5ec2ab1646574a83af811b7d5a02a188
gdjz_e202201004
GroupedDBID -SI
-S~
2B.
4A8
8FE
8FG
92I
93N
AAXDM
ABJCF
ABUWG
AFKRA
ALMA_UNASSIGNED_HOLDINGS
BENPR
BGLVJ
BPHCQ
BVBZV
CAJEI
CCPQU
GROUPED_DOAJ
HCIFZ
L6V
M7S
PHGZM
PHGZT
PIMPY
PMFND
PQQKQ
PROAC
PSX
PTHSS
Q--
TCJ
TGT
U1G
U5S
AAFWJ
AFPKN
ID FETCH-LOGICAL-d253t-c2e3878d0ddfa5d2abe60982c8061bd3e147e6ed43db51a4f0276488f8f8c8b53
IEDL.DBID DOA
ISSN 2096-4579
IngestDate Wed Aug 27 00:24:46 EDT 2025
Thu May 29 04:00:24 EDT 2025
IsDoiOpenAccess true
IsOpenAccess true
IsPeerReviewed true
IsScholarly true
Issue 1
Keywords white light-emitting diodes
efficiency
CsPbBr3 quantum dots
ligand modification
stability
Language English
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-d253t-c2e3878d0ddfa5d2abe60982c8061bd3e147e6ed43db51a4f0276488f8f8c8b53
OpenAccessLink https://doaj.org/article/5ec2ab1646574a83af811b7d5a02a188
PageCount 14
ParticipantIDs doaj_primary_oai_doaj_org_article_5ec2ab1646574a83af811b7d5a02a188
wanfang_journals_gdjz_e202201004
PublicationCentury 2000
PublicationDate 2022
2022-01-01
PublicationDateYYYYMMDD 2022-01-01
PublicationDate_xml – year: 2022
  text: 2022
PublicationDecade 2020
PublicationTitle Opto-Electronic Advances
PublicationTitle_FL Opto-Electronic Advances
PublicationYear 2022
Publisher Key Laboratory of Optoelectronic Technology&Systems(Ministry of Education),Chongqing University,Chongqing 400044,China%Department of Physics,Southern University of Science and Technology,Shenzhen 518055,China
Institue of Optics and Electronics, Chinese Academy of Sciences
Publisher_xml – name: Key Laboratory of Optoelectronic Technology&Systems(Ministry of Education),Chongqing University,Chongqing 400044,China%Department of Physics,Southern University of Science and Technology,Shenzhen 518055,China
– name: Institue of Optics and Electronics, Chinese Academy of Sciences
SSID ssj0002856797
Score 2.543927
Snippet All-inorganic CsPbBr3 perovskite quantum dots (QDs) have received great attention in white light emission because of their outstanding properties. However,...
SourceID doaj
wanfang
SourceType Open Website
Aggregation Database
StartPage 35
SubjectTerms cspbbr3 quantum dots
efficiency
ligand modification
stability
white light-emitting diodes
Title Highly efficient emission and high-CRI warm white light-emitting diodes from ligand-modified CsPbBr3 quantum dots
URI https://d.wanfangdata.com.cn/periodical/gdjz-e202201004
https://doaj.org/article/5ec2ab1646574a83af811b7d5a02a188
Volume 5
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwrZ1LS8NAEIAX8eRFFBXriz14XZpknznaYqmCImKht7DJ7paWNtU-KPrrndnk0JsXyS2bFzNZZmZ35htC7m0uqlyGiikpAhNaB5aDX8KkMlIHLJ-JO7ovr2o4Es9jOd5r9YU5YQ0euBFcV_oqsyVSsKQW1nAbTJqW2kmbZDY1scwXbN5eMDWLS0ZS6dhZBQYVE1LnzR5llkPQ0V16RA5lEUSZYIph5PXHup062HqyZ2IGJ-S49Q3pQ_NNp-TA12fkCzMx5t_UR9YDmAiKHdpwjYva2lHEDbP--xPd2dWC7nBTgM4jHAQuiznN1E2Xzq8pFpLgENzFFks3DeB80v76reytOP3agoS3Cwox6vqcjAaPH_0ha_skMJdJvmFV5rnRxiXOBSsdiMurJDdZZcBYl477VGivvBPclTK1IkAoqmDiBjgqU0p-QQ7rZe0vCVUm4VVIE48grsxDOFQGY22aVtZbzV2H9FBSxWeDwigQTh1PgMqKVmXFXyrrENrKuWgnzLqYuNlP4VEnCTLsrv7jPdfkCB_YLJjckMPNautvwYXYlHfxb_kFXLfCUg
linkProvider Directory of Open Access Journals
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Highly+efficient+emission+and+high-CRI+warm+white+light-emitting+diodes+from+ligand-modified+CsPbBr3+quantum+dots&rft.jtitle=%E5%85%89%E7%94%B5%E8%BF%9B%E5%B1%95%EF%BC%88%E8%8B%B1%E6%96%87%E7%89%88%EF%BC%89&rft.au=Dongdong+Yan&rft.au=Shuangyi+Zhao&rft.au=Yubo+Zhang&rft.au=Huaxin+Wang&rft.date=2022&rft.pub=Key+Laboratory+of+Optoelectronic+Technology%26Systems%28Ministry+of+Education%29%2CChongqing+University%2CChongqing+400044%2CChina%25Department+of+Physics%2CSouthern+University+of+Science+and+Technology%2CShenzhen+518055%2CChina&rft.issn=2096-4579&rft.volume=5&rft.issue=1&rft.spage=35&rft.epage=48&rft_id=info:doi/10.29026%2Foea.2022.200075&rft.externalDocID=gdjz_e202201004
thumbnail_s http://utb.summon.serialssolutions.com/2.0.0/image/custom?url=http%3A%2F%2Fwww.wanfangdata.com.cn%2Fimages%2FPeriodicalImages%2Fgdjz-e%2Fgdjz-e.jpg