Tunable multiple non-volatile resistance states in multiferroic tunnel junctions based on sliding ferroelectric PtTe2

• Published in: New journal of physics Vol. 27; no. 8; pp. 083502 - 83512
• Main Authors: Liu, Yulin, Zhou, Yan-Hong, Zheng, Xiaohong, Xie, Fang, Liu, Zhimin
• Format: Journal Article
• Language: English
• Published: Bristol IOP Publishing 01.08.2025
• Subjects: Barrier layers; Bilayers; Density functional theory; Electrode polarization; Electrodes; Fermi level; Ferroelectric materials; Ferroelectricity; Ferromagnetic materials; First principles; first-principle calculations; Magnetization; Magnetoresistance; Magnetoresistivity; Memory devices; Multiferroic materials; multiferroic tunnel junctions, tunneling electroresistance; Sliding; Transport properties; Tunnel junctions; tunneling magnetoresistance

Multiferroic tunnel junctions (MFTJs) own significant potential application in non-volatile memory devices due to their multifunctional characteristics, which has attracted widespread attention. The recent advancements in van der Waals (vdW) multiferroic materials have successfully combined ferromag...