Forming operation in Ge-rich Ge x Sb y Te z phase change memories
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Published in | Solid-state electronics Vol. 133; pp. 38 - 44 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
01.07.2017
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Online Access | Get full text |
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Author | Zuliani, Paola Palumbo, Elisabetta Borghi, Massimo Annunziata, Roberto |
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CitedBy_id | crossref_primary_10_1039_D2TC00784C crossref_primary_10_1016_j_mssp_2022_107101 crossref_primary_10_1016_j_mssp_2021_106184 crossref_primary_10_1021_acsaelm_2c00038 crossref_primary_10_1557_mrs_2019_202 crossref_primary_10_1021_acs_nanolett_4c01462 crossref_primary_10_1109_JEDS_2019_2913467 crossref_primary_10_1002_pssr_202300421 crossref_primary_10_3390_nano11092382 crossref_primary_10_1016_j_mtla_2022_101345 crossref_primary_10_1103_PhysRevMaterials_5_095004 crossref_primary_10_1016_j_actamat_2020_09_033 crossref_primary_10_1149_2_0071809jss crossref_primary_10_1002_pssr_202200450 crossref_primary_10_1149_2_0021910jss crossref_primary_10_1016_j_physb_2017_11_087 crossref_primary_10_3390_nano12101717 crossref_primary_10_1007_s10854_020_03345_3 crossref_primary_10_1109_TED_2023_3240122 crossref_primary_10_1016_j_apsusc_2021_151514 |
Cites_doi | 10.1109/TED.2014.2313889 10.1126/science.1221561 10.1109/VLSIT.2015.7223708 10.1109/IRPS.2010.5488760 10.1016/j.sse.2015.04.009 10.1109/TED.2013.2285403 10.1126/science.1201938 |
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References | Novielli (10.1016/j.sse.2017.03.016_b0050) 2013 Cheng (10.1016/j.sse.2017.03.016_b0020) 2011 Rizzi (10.1016/j.sse.2017.03.016_b0040) 2014 Zuliani (10.1016/j.sse.2017.03.016_b0055) 2015; 111 Ciocchini (10.1016/j.sse.2017.03.016_b0060) 2014; 61 Navarro (10.1016/j.sse.2017.03.016_b0065) 2014 Loke (10.1016/j.sse.2017.03.016_b0005) 2012; 336 Fugazza (10.1016/j.sse.2017.03.016_b0035) 2009 10.1016/j.sse.2017.03.016_b0030 Xiong (10.1016/j.sse.2017.03.016_b0010) 2011; 332 10.1016/j.sse.2017.03.016_b0075 Zuliani (10.1016/j.sse.2017.03.016_b0025) 2013; 60 Boniardi (10.1016/j.sse.2017.03.016_b0045) 2014 10.1016/j.sse.2017.03.016_b0070 Bez (10.1016/j.sse.2017.03.016_b0015) 2009 |
References_xml | – volume: 61 start-page: 2136 issue: 6 year: 2014 ident: 10.1016/j.sse.2017.03.016_b0060 article-title: Modeling resistance instabilities of set and reset states in phase change memory with Ge-rich GeSbTe publication-title: IEEE Trans Electr Dev doi: 10.1109/TED.2014.2313889 contributor: fullname: Ciocchini – volume: 336 start-page: 1566 year: 2012 ident: 10.1016/j.sse.2017.03.016_b0005 article-title: Breaking the speed limits of phase-change memory publication-title: Science doi: 10.1126/science.1221561 contributor: fullname: Loke – ident: 10.1016/j.sse.2017.03.016_b0030 doi: 10.1109/VLSIT.2015.7223708 – ident: 10.1016/j.sse.2017.03.016_b0070 doi: 10.1109/IRPS.2010.5488760 – start-page: 681 year: 2014 ident: 10.1016/j.sse.2017.03.016_b0045 article-title: Optimization metrics for phase change memories (PCM) cell architectures publication-title: IEDM Tech Dig contributor: fullname: Boniardi – start-page: 723 year: 2009 ident: 10.1016/j.sse.2017.03.016_b0035 article-title: Distributed-Poole-Frenkel modeling of anomalous resistance scaling and fluctuations in phase-change memory (PCM) devices publication-title: IEDM Tech Dig contributor: fullname: Fugazza – volume: 111 start-page: 27 year: 2015 ident: 10.1016/j.sse.2017.03.016_b0055 article-title: Engineering of chalcogenide materials for embedded applications of phase change memory publication-title: Solid-State Electr doi: 10.1016/j.sse.2015.04.009 contributor: fullname: Zuliani – start-page: 89 year: 2009 ident: 10.1016/j.sse.2017.03.016_b0015 article-title: Chalcogenide PCM: a memory technology for net decade contributor: fullname: Bez – start-page: 51 year: 2011 ident: 10.1016/j.sse.2017.03.016_b0020 article-title: A high performance phase change memory with fast switching speed and high temperature retention by engineering the GexSbyTez phase change material contributor: fullname: Cheng – start-page: 701 year: 2014 ident: 10.1016/j.sse.2017.03.016_b0040 article-title: Statistics of set transition in phase change memory (PCM) arrays publication-title: IEDM Tech Dig contributor: fullname: Rizzi – start-page: 589 year: 2013 ident: 10.1016/j.sse.2017.03.016_b0050 article-title: Atomic migration in phase change materials publication-title: IEDM Tech Dig contributor: fullname: Novielli – volume: 60 start-page: 4020 issue: 12 year: 2013 ident: 10.1016/j.sse.2017.03.016_b0025 article-title: Overcoming temperature limitations in phase change memories with optimized GexSbyTez publication-title: IEEE Trans Electron Devices doi: 10.1109/TED.2013.2285403 contributor: fullname: Zuliani – ident: 10.1016/j.sse.2017.03.016_b0075 – volume: 332 start-page: 568 year: 2011 ident: 10.1016/j.sse.2017.03.016_b0010 article-title: Low-power switching of phase-change materials with carbon nanotube electrodes publication-title: Science doi: 10.1126/science.1201938 contributor: fullname: Xiong – year: 2014 ident: 10.1016/j.sse.2017.03.016_b0065 article-title: Trade-off between set and data retention performance thanks to innovative materials for phase-change memory publication-title: IEDM Tech Dig contributor: fullname: Navarro |
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