In Situ O xide, G aN Interlayer-Based Vertical Trench MOS FET ( OG-FET ) on Bulk GaN substrates
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Published in | IEEE electron device letters Vol. 38; no. 3; pp. 353 - 355 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
01.03.2017
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Online Access | Get full text |
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ISSN: | 0741-3106 1558-0563 |
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DOI: | 10.1109/LED.2017.2649599 |