Low Thermal Budget Fabrication and Performance Comparison of MFM Capacitors With Thermal and Plasma-Enhanced Atomic Layer Deposited Hf 0.45 Zr 0.55 O x Ferroelectrics
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Published in | IEEE transactions on electron devices Vol. 68; no. 12; pp. 6359 - 6364 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
01.12.2021
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Online Access | Get full text |
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Author | Xiao, Dong-Qi Luo, Bin-Bin Xiong, Wen Wu, Xiaohan Zhang, David Wei Ding, Shi-Jin |
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Author_xml | – sequence: 1 givenname: Dong-Qi surname: Xiao fullname: Xiao, Dong-Qi – sequence: 2 givenname: Bin-Bin surname: Luo fullname: Luo, Bin-Bin – sequence: 3 givenname: Wen surname: Xiong fullname: Xiong, Wen – sequence: 4 givenname: Xiaohan surname: Wu fullname: Wu, Xiaohan – sequence: 5 givenname: David Wei surname: Zhang fullname: Zhang, David Wei – sequence: 6 givenname: Shi-Jin orcidid: 0000-0002-5766-089X surname: Ding fullname: Ding, Shi-Jin |
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Cites_doi | 10.1109/LED.2020.3019265 10.1109/TED.2020.2998444 10.1021/acsaelm.0c01065 10.1021/acsami.0c15091 10.7567/JJAP.57.11UF06 10.1002/adfm.201600590 10.1063/1.5060676 10.1016/j.jeurceramsoc.2019.05.065 10.1021/nl302049k 10.1088/1361-6633/ab49d6 10.1016/j.mee.2017.04.031 10.1021/acsaelm.0c00680 10.1109/TED.2018.2816968 10.1109/LED.2018.2846570 10.1039/D0NR02401E 10.1063/1.4902396 10.1109/LED.2019.2950916 10.1109/LED.2019.2896231 10.1002/pssa.201900840 10.1109/LED.2019.2955198 10.1038/s41467-020-15159-2 10.1063/1.4995619 10.1021/acsami.5b05773 10.1109/LED.2019.2944960 10.1109/TED.2020.3028528 10.1063/1.3634052 10.1063/1.4829064 10.1063/1.2735945 10.1016/j.jeurceramsoc.2016.10.028 10.1021/acsami.5b11653 10.1088/1361-6528/aba5b7 10.1063/5.0035579 |
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References | ref13 ref34 ref12 ref15 ref14 ref31 ref30 ref33 ref10 ref2 ref1 peši? (ref35) 2016; 26 ref17 ref16 ref19 ref18 o’connor (ref11) 2018; 6 kashir (ref25) 2021; 218 lehninger (ref32) 2020; 217 ref24 ref23 ref26 ref20 ref22 ref21 ref28 ref27 ref29 ref8 ref7 ref4 ref3 ref6 ref5 cho (ref9) 2021; 5 |
References_xml | – volume: 217 start-page: 1 year: 2020 ident: ref32 article-title: Back-end-of-line compatible low-temperature furnace anneal for ferroelectric hafnium zirconium oxide formation publication-title: Phys Status Solidi A Appl Mater Sci contributor: fullname: lehninger – ident: ref22 doi: 10.1109/LED.2020.3019265 – ident: ref15 doi: 10.1109/TED.2020.2998444 – ident: ref17 doi: 10.1021/acsaelm.0c01065 – ident: ref26 doi: 10.1021/acsami.0c15091 – ident: ref8 doi: 10.7567/JJAP.57.11UF06 – volume: 26 start-page: 4601 year: 2016 ident: ref35 article-title: Physical mechanisms behind the field-cycling behavior of HfO2-based ferroelectric capacitors publication-title: Adv Funct Mater doi: 10.1002/adfm.201600590 contributor: fullname: peši? – volume: 218 start-page: 1 year: 2021 ident: ref25 article-title: Ferroelectric and dielectric properties of Hf0.5Zr0.5O2 thin film near morphotropic phase boundary publication-title: Phys Status Solidi Appl Mater Sci contributor: fullname: kashir – volume: 6 year: 2018 ident: ref11 article-title: Stabilization of ferroelectric Hfx ${\text{Zr}}_{1-x}\text{O}_{2}$ films using a millisecond flash lamp annealing technique publication-title: APL Mater doi: 10.1063/1.5060676 contributor: fullname: o’connor – ident: ref24 doi: 10.1016/j.jeurceramsoc.2019.05.065 – ident: ref19 doi: 10.1021/nl302049k – ident: ref28 doi: 10.1088/1361-6633/ab49d6 – ident: ref27 doi: 10.1016/j.mee.2017.04.031 – ident: ref7 doi: 10.1021/acsaelm.0c00680 – ident: ref18 doi: 10.1109/TED.2018.2816968 – ident: ref23 doi: 10.1109/LED.2018.2846570 – ident: ref6 doi: 10.1039/D0NR02401E – ident: ref20 doi: 10.1063/1.4902396 – ident: ref13 doi: 10.1109/LED.2019.2950916 – ident: ref4 doi: 10.1109/LED.2019.2896231 – ident: ref16 doi: 10.1002/pssa.201900840 – ident: ref12 doi: 10.1109/LED.2019.2955198 – ident: ref3 doi: 10.1038/s41467-020-15159-2 – ident: ref31 doi: 10.1063/1.4995619 – ident: ref34 doi: 10.1021/acsami.5b05773 – ident: ref14 doi: 10.1109/LED.2019.2944960 – ident: ref2 doi: 10.1109/TED.2020.3028528 – ident: ref1 doi: 10.1063/1.3634052 – ident: ref21 doi: 10.1063/1.4829064 – ident: ref29 doi: 10.1063/1.2735945 – ident: ref33 doi: 10.1016/j.jeurceramsoc.2016.10.028 – ident: ref5 doi: 10.1021/acsami.5b11653 – ident: ref10 doi: 10.1088/1361-6528/aba5b7 – ident: ref30 doi: 10.1063/5.0035579 – volume: 5 start-page: 1 year: 2021 ident: ref9 article-title: Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors publication-title: NPJ 2D Mater Appl contributor: fullname: cho |
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Title | Low Thermal Budget Fabrication and Performance Comparison of MFM Capacitors With Thermal and Plasma-Enhanced Atomic Layer Deposited Hf 0.45 Zr 0.55 O x Ferroelectrics |
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