Extremely High-κ Hf 0.2 Zr 0.8 O 2 Gate Stacks Integrated Into Eight Stacked Ge 0.95 Si 0.05 Nanowires and Nanosheets nFETs to Boost I ON

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 70; no. 12; pp. 6673 - 6679
Main Authors Chen, Wei-Jen, Liu, Yi-Chun, Chen, Yun-Wen, Chen, Yu-Rui, Lin, Hsin-Cheng, Tu, Chien-Te, Huang, Bo-Wei, Liu, C. W.
Format Journal Article
LanguageEnglish
Published 01.12.2023
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ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2023.3315685