Choice of Si doping type for optimizing the performances of a SiOx-based tunneling electron source fabricated on SiO x /Si substrate
Abstract A new type on-chip electron source based on electroformed SiO x is recently reported to show dense and efficient electron emission under low working voltage. Here we study the effect of the Si doping type of SiO x /Si substrate on the performances of the SiO x -based electron source fabrica...
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Published in | Nano express Vol. 1; no. 3; p. 30019 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
01.12.2020
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Online Access | Get full text |
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