Choice of Si doping type for optimizing the performances of a SiOx-based tunneling electron source fabricated on SiO x /Si substrate

Abstract A new type on-chip electron source based on electroformed SiO x is recently reported to show dense and efficient electron emission under low working voltage. Here we study the effect of the Si doping type of SiO x /Si substrate on the performances of the SiO x -based electron source fabrica...

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Bibliographic Details
Published inNano express Vol. 1; no. 3; p. 30019
Main Authors Yang, Wei, Kong, Siqi, Zhan, Fangyuan, Li, Zhiwei, Wang, Yuwei, Wei, Xianlong
Format Journal Article
LanguageEnglish
Published 01.12.2020
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