Investigation of Al y Ga 1− y N/Al 0.5 Ga 0.5 N quantum dot properties for the design of ultraviolet emitters

Abstract Self-assembled Al y Ga 1− y N quantum dots (QDs), with y = 0 and 0.1, have been grown by molecular beam epitaxy on Al 0.5 Ga 0.5 N(0001) oriented layers using sapphire substrates. The QD formation has been followed in situ by reflection high energy electron diffraction (RHEED). A two- to th...

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Published inJapanese Journal of Applied Physics Vol. 55; no. 5S; p. 5
Main Authors Brault, Julien, Matta, Samuel, Ngo, Thi-Huong, Korytov, Maxim, Rosales, Daniel, Damilano, Benjamin, Leroux, Mathieu, Vennéguès, Philippe, Al Khalfioui, Mohamed, Courville, Aimeric, Tottereau, Olivier, Massies, Jean, Gil, Bernard
Format Journal Article
LanguageEnglish
Published 01.05.2016
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Abstract Abstract Self-assembled Al y Ga 1− y N quantum dots (QDs), with y = 0 and 0.1, have been grown by molecular beam epitaxy on Al 0.5 Ga 0.5 N(0001) oriented layers using sapphire substrates. The QD formation has been followed in situ by reflection high energy electron diffraction (RHEED). A two- to three-dimensional (2D–3D) transition of the layer morphology is observed, characterized by a change of the RHEED pattern from streaky lines to Bragg spots. High QD densities, from 10 10 up to near 10 12 cm −2 , have been obtained. By decreasing the GaN QD size and incorporating Al inside the QDs, a strong variation in the photoluminescence (PL) emission has been observed, enabling to cover a large spectral range from near UV (3 eV) to UV-B (3.95 eV). By combining temperature-dependent and time-resolved PL measurements, the internal quantum efficiency of the QDs has been determined at both low and high temperatures as a function of the PL energy.
AbstractList Abstract Self-assembled Al y Ga 1− y N quantum dots (QDs), with y = 0 and 0.1, have been grown by molecular beam epitaxy on Al 0.5 Ga 0.5 N(0001) oriented layers using sapphire substrates. The QD formation has been followed in situ by reflection high energy electron diffraction (RHEED). A two- to three-dimensional (2D–3D) transition of the layer morphology is observed, characterized by a change of the RHEED pattern from streaky lines to Bragg spots. High QD densities, from 10 10 up to near 10 12 cm −2 , have been obtained. By decreasing the GaN QD size and incorporating Al inside the QDs, a strong variation in the photoluminescence (PL) emission has been observed, enabling to cover a large spectral range from near UV (3 eV) to UV-B (3.95 eV). By combining temperature-dependent and time-resolved PL measurements, the internal quantum efficiency of the QDs has been determined at both low and high temperatures as a function of the PL energy.
Author Courville, Aimeric
Rosales, Daniel
Al Khalfioui, Mohamed
Damilano, Benjamin
Matta, Samuel
Brault, Julien
Korytov, Maxim
Gil, Bernard
Tottereau, Olivier
Ngo, Thi-Huong
Vennéguès, Philippe
Leroux, Mathieu
Massies, Jean
Author_xml – sequence: 1
  givenname: Julien
  surname: Brault
  fullname: Brault, Julien
– sequence: 2
  givenname: Samuel
  surname: Matta
  fullname: Matta, Samuel
– sequence: 3
  givenname: Thi-Huong
  surname: Ngo
  fullname: Ngo, Thi-Huong
– sequence: 4
  givenname: Maxim
  surname: Korytov
  fullname: Korytov, Maxim
– sequence: 5
  givenname: Daniel
  surname: Rosales
  fullname: Rosales, Daniel
– sequence: 6
  givenname: Benjamin
  surname: Damilano
  fullname: Damilano, Benjamin
– sequence: 7
  givenname: Mathieu
  surname: Leroux
  fullname: Leroux, Mathieu
– sequence: 8
  givenname: Philippe
  surname: Vennéguès
  fullname: Vennéguès, Philippe
– sequence: 9
  givenname: Mohamed
  surname: Al Khalfioui
  fullname: Al Khalfioui, Mohamed
– sequence: 10
  givenname: Aimeric
  surname: Courville
  fullname: Courville, Aimeric
– sequence: 11
  givenname: Olivier
  surname: Tottereau
  fullname: Tottereau, Olivier
– sequence: 12
  givenname: Jean
  surname: Massies
  fullname: Massies, Jean
– sequence: 13
  givenname: Bernard
  surname: Gil
  fullname: Gil, Bernard
BookMark eNotkL1uwjAUha2KSgXatbNfIMGO_8KIUKEgRDuwR3ZyQ12FmNoGiTfo3EfkSZqUTufebzg6-kZo0LoWEHqmJFVCqsl6PXtPhUiJWCyJvENDyrhKOJFigIaEZDTh0yx7QKMQPrtXCk6HyK3aM4Ro9zpa12JX41mDL3ipMb1-_3TXdtIBkooe9bHFXyfdxtMBVy7io3dH8NFCwLXzOH4AriDY_V_TqYlen61rIGI42BjBh0d0X-smwNN_jtFu8bKbvyabt-VqPtskZc5looRg3dZMk4owrvupjBgyBWPqDgtTgdC8MjllShmaEUVLBcxUnEtWypyNUXqrLb0LwUNdHL09aH8pKCl6W0VvqxCiuNlivyTOXck
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Cites_doi 10.1063/1.4887140
10.1063/1.3552296
10.1002/1521-396X(200207)192:1<33::AID-PSSA33>3.0.CO%3B2-C
10.1063/1.1538334
10.1063/1.115798
10.1002/(SICI)1521-3951(199911)216:1<371::AID-PSSB371>3.0.CO%3B2-S
10.1103/PhysRevB.88.125437
10.1063/1.4770075
10.1063/1.117830
10.1143/JJAP.42.L885
10.7567/JJAP.52.08JG01
10.1063/1.367878
10.1063/1.2841825
10.1063/1.4908282
10.1063/1.3115027
10.1063/1.4923425
10.1088/0268-1242/26/1/014036
10.1063/1.4773594
10.1063/1.4889922
10.1038/nature04760
10.1016/j.jcrysgro.2007.11.152
10.1002/pssc.200880958
10.1063/1.3654053
10.1063/1.1867565
10.1016/j.jcrysgro.2012.11.015
10.1002/1521-3951(200212)234:3<887::AID-PSSB887>3.0.CO%3B2-D
10.1088/0268-1242/29/8/084004
10.1063/1.1530375
10.1088/0268-1242/29/8/084001
10.1002/pssc.200460603
10.1063/1.123691
10.1103/PhysRevB.56.R7069
10.1063/1.124567
10.1063/1.3075899
10.1063/1.4886177
10.1063/1.2335400
10.1103/PhysRevB.73.113304
ContentType Journal Article
DBID AAYXX
CITATION
DOI 10.7567/JJAP.55.05FG06
DatabaseName CrossRef
DatabaseTitle CrossRef
DatabaseTitleList CrossRef
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
Physics
EISSN 1347-4065
ExternalDocumentID 10_7567_JJAP_55_05FG06
GroupedDBID AALHV
AAYXX
ACGFS
ACNCT
ALMA_UNASSIGNED_HOLDINGS
ATQHT
CEBXE
CITATION
F5P
IOP
IZVLO
KOT
MC8
N5L
QTG
RNS
SJN
ID FETCH-LOGICAL-c846-75539222a0d034a654130b09ebbf2225bde5a4db81377b12071c7e3bd4463c683
ISSN 0021-4922
IngestDate Fri Aug 23 02:36:56 EDT 2024
IsPeerReviewed true
IsScholarly true
Issue 5S
Language English
LinkModel OpenURL
MergedId FETCHMERGED-LOGICAL-c846-75539222a0d034a654130b09ebbf2225bde5a4db81377b12071c7e3bd4463c683
ParticipantIDs crossref_primary_10_7567_JJAP_55_05FG06
PublicationCentury 2000
PublicationDate 2016-05-01
PublicationDateYYYYMMDD 2016-05-01
PublicationDate_xml – month: 05
  year: 2016
  text: 2016-05-01
  day: 01
PublicationDecade 2010
PublicationTitle Japanese Journal of Applied Physics
PublicationYear 2016
References Himwas (r28) 2014; 116
Damilano (r10) 1999; 75
Duboz (r25) 2005; 2
Cho (r11) 2002; 81
Tanaka (r17) 2003; 42
Guillot (r27) 2006; 100
Korytov (r32)
Elmaghraoui (r24) 2014; 116
Brault (r34) 2009; 105
Leroux (r35) 2014; 116
Bretagnon (r36) 2006; 73
Muramoto (r01) 2014; 29
Daudin (r07) 1997; 56
Bigenwald (r38) 1999; 216
Himwas (r12) 2012; 101
Damilano (r19) 2015; 118
Miyamura (r09) 2002; 192
Taniyasu (r02) 2006; 441
Widmann (r26) 1998; 83
Leroux (r33) 2002; 234
Nagamatsu (r04) 2008; 310
Jeon (r13) 2005; 86
Iwata (r37) 2015; 117
Tanaka (r16) 1996; 69
Brault (r20) 2013; 52
Gérard (r06) 1996; 68
Kinoshita (r14) 2013; 102
Brault (r15) 2013; 363
Kneissl (r03) 2011; 26
Brault (r08) 2003; 93
Hirayama (r05) 2009; 6
Kahouli (r21) 2011; 110
Brault (r23) 2014; 29
Grandjean (r31) 1999; 74
Sergent (r30) 2011; 109
Huault (r18) 2008; 92
Rosales (r22) 2013; 88
Korytov (r29) 2009; 94
References_xml – volume: 116
  year: 2014
  ident: r28
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.4887140
  contributor:
    fullname: Himwas
– volume: 109
  year: 2011
  ident: r30
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.3552296
  contributor:
    fullname: Sergent
– volume: 192
  start-page: 33
  year: 2002
  ident: r09
  publication-title: Phys. Status Solidi A
  doi: 10.1002/1521-396X(200207)192:1<33::AID-PSSA33>3.0.CO%3B2-C
  contributor:
    fullname: Miyamura
– volume: 93
  start-page: 3108
  year: 2003
  ident: r08
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.1538334
  contributor:
    fullname: Brault
– volume: 68
  start-page: 3123
  year: 1996
  ident: r06
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.115798
  contributor:
    fullname: Gérard
– volume: 216
  start-page: 371
  year: 1999
  ident: r38
  publication-title: Phys. Status Solidi
  doi: 10.1002/(SICI)1521-3951(199911)216:1<371::AID-PSSB371>3.0.CO%3B2-S
  contributor:
    fullname: Bigenwald
– volume: 88
  year: 2013
  ident: r22
  publication-title: Phys. Rev. B
  doi: 10.1103/PhysRevB.88.125437
  contributor:
    fullname: Rosales
– volume: 101
  year: 2012
  ident: r12
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.4770075
  contributor:
    fullname: Himwas
– volume: 69
  start-page: 4096
  year: 1996
  ident: r16
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.117830
  contributor:
    fullname: Tanaka
– volume: 42
  start-page: L885
  year: 2003
  ident: r17
  publication-title: Jpn. J. Appl. Phys.
  doi: 10.1143/JJAP.42.L885
  contributor:
    fullname: Tanaka
– volume: 52
  year: 2013
  ident: r20
  publication-title: Jpn. J. Appl. Phys.
  doi: 10.7567/JJAP.52.08JG01
  contributor:
    fullname: Brault
– volume: 83
  start-page: 7618
  year: 1998
  ident: r26
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.367878
  contributor:
    fullname: Widmann
– volume: 92
  year: 2008
  ident: r18
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.2841825
  contributor:
    fullname: Huault
– volume: 117
  year: 2015
  ident: r37
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.4908282
  contributor:
    fullname: Iwata
– volume: 94
  year: 2009
  ident: r29
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.3115027
  contributor:
    fullname: Korytov
– volume: 118
  year: 2015
  ident: r19
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.4923425
  contributor:
    fullname: Damilano
– volume: 26
  year: 2011
  ident: r03
  publication-title: Semicond. Sci. Technol.
  doi: 10.1088/0268-1242/26/1/014036
  contributor:
    fullname: Kneissl
– volume: 102
  year: 2013
  ident: r14
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.4773594
  contributor:
    fullname: Kinoshita
– volume: 116
  year: 2014
  ident: r35
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.4889922
  contributor:
    fullname: Leroux
– volume: 441
  start-page: 325
  year: 2006
  ident: r02
  publication-title: Nature
  doi: 10.1038/nature04760
  contributor:
    fullname: Taniyasu
– volume: 310
  start-page: 2326
  year: 2008
  ident: r04
  publication-title: J. Cryst. Growth
  doi: 10.1016/j.jcrysgro.2007.11.152
  contributor:
    fullname: Nagamatsu
– ident: r32
  contributor:
    fullname: Korytov
– volume: 6
  start-page: S356
  year: 2009
  ident: r05
  publication-title: Phys. Status Solidi C
  doi: 10.1002/pssc.200880958
  contributor:
    fullname: Hirayama
– volume: 110
  year: 2011
  ident: r21
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.3654053
  contributor:
    fullname: Kahouli
– volume: 86
  year: 2005
  ident: r13
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.1867565
  contributor:
    fullname: Jeon
– volume: 363
  start-page: 282
  year: 2013
  ident: r15
  publication-title: J. Cryst. Growth
  doi: 10.1016/j.jcrysgro.2012.11.015
  contributor:
    fullname: Brault
– volume: 234
  start-page: 887
  year: 2002
  ident: r33
  publication-title: Phys. Status Solidi B
  doi: 10.1002/1521-3951(200212)234:3<887::AID-PSSB887>3.0.CO%3B2-D
  contributor:
    fullname: Leroux
– volume: 29
  year: 2014
  ident: r01
  publication-title: Semicond. Sci. Technol.
  doi: 10.1088/0268-1242/29/8/084004
  contributor:
    fullname: Muramoto
– volume: 81
  start-page: 4934
  year: 2002
  ident: r11
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.1530375
  contributor:
    fullname: Cho
– volume: 29
  year: 2014
  ident: r23
  publication-title: Semicond. Sci. Technol.
  doi: 10.1088/0268-1242/29/8/084001
  contributor:
    fullname: Brault
– volume: 2
  start-page: 964
  year: 2005
  ident: r25
  publication-title: Phys. Status Solidi C
  doi: 10.1002/pssc.200460603
  contributor:
    fullname: Duboz
– volume: 74
  start-page: 1854
  year: 1999
  ident: r31
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.123691
  contributor:
    fullname: Grandjean
– volume: 56
  start-page: R7069
  year: 1997
  ident: r07
  publication-title: Phys. Rev. B
  doi: 10.1103/PhysRevB.56.R7069
  contributor:
    fullname: Daudin
– volume: 75
  start-page: 962
  year: 1999
  ident: r10
  publication-title: Appl. Phys. Lett.
  doi: 10.1063/1.124567
  contributor:
    fullname: Damilano
– volume: 105
  year: 2009
  ident: r34
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.3075899
  contributor:
    fullname: Brault
– volume: 116
  year: 2014
  ident: r24
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.4886177
  contributor:
    fullname: Elmaghraoui
– volume: 100
  year: 2006
  ident: r27
  publication-title: J. Appl. Phys.
  doi: 10.1063/1.2335400
  contributor:
    fullname: Guillot
– volume: 73
  year: 2006
  ident: r36
  publication-title: Phys. Rev. B
  doi: 10.1103/PhysRevB.73.113304
  contributor:
    fullname: Bretagnon
SSID ssj0026541
ssj0026590
ssj0026540
ssj0064762
Score 2.1131551
Snippet Abstract Self-assembled Al y Ga 1− y N quantum dots (QDs), with y = 0 and 0.1, have been grown by molecular beam epitaxy on Al 0.5 Ga 0.5 N(0001) oriented...
SourceID crossref
SourceType Aggregation Database
StartPage 5
Title Investigation of Al y Ga 1− y N/Al 0.5 Ga 0.5 N quantum dot properties for the design of ultraviolet emitters
Volume 55
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV3NjtMwELbKIiQ4IFhAsPzIBxCHKN38OY6PBbEtlQgrUaS9RXbioEpts-omiPIEnHkB3o0nYSZOkxTlsHBJYqeetplPnhnnmzEhL3MZ5EoEmQ3WCgIUjcnKuXJs7kecu1JoyTDB-UMczj4H8wt2MRr96rGWqlKN0--DeSX_o1XoA71iluw_aLYVCh1wDfqFI2gYjtfSca9IhnH7JitrZ02l5dYchuiV8KAdY82EleWMGd7CU4y5lGBs1hbEpEjRukR2tb5qOYdZzetAidWq3Mr67X1p6fWyLsZ54NCCscVNLK0Bz7Zml3Zk-jdbCdL2SdldChpuOS7N6vS60i3jI_5SGAbT0p5VRWNg6ySd7a4svppEo2_LdX_dwg07lmCbRwDgECYreazN9OsHHCJas3vEfn42ZXwbHLJPvdmWDdkAzkJ8Cz2fT87HjI0ddjZ1Bopt_2UEW2oiBEUoIcHxCWOJGX-D3PS4YBjdv_943kb0IcNKOV3D7TVEeycMeNhUrTf_2BQPxa85PfyZPeeo5-Us7pG7jRLpxGDtPhnpzTG50ytaeUxuNWp9QIoD_NEip5MV3dGppO7vHz_hKj6FDgAcduEppg3uKOCOdrijgDsKuKMGdyiphzu6x91Dsjh7t3g7s5sNPOwU3FqbMwbet-dJJ3P8QOLz8R3lCK1UjssMKtNMBpmKsOqlcj3wdlOufZUFQeinYeQ_IkebYqMfE6rA9oSpcLOcM3Dw8wgGKunnIlRCpCp4Ql7vH1xyacq0JMOaPLn2J5-S2x1un5Gjclvp5-CBlupFjYI_5Bp9Mg
link.rule.ids 315,786,790,27957,27958
linkProvider IOP Publishing
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Investigation+of+Al+y+Ga+1%E2%88%92+y+N%2FAl+0.5+Ga+0.5+N+quantum+dot+properties+for+the+design+of+ultraviolet+emitters&rft.jtitle=Japanese+Journal+of+Applied+Physics&rft.au=Brault%2C+Julien&rft.au=Matta%2C+Samuel&rft.au=Ngo%2C+Thi-Huong&rft.au=Korytov%2C+Maxim&rft.date=2016-05-01&rft.issn=0021-4922&rft.eissn=1347-4065&rft.volume=55&rft.issue=5S&rft.spage=5&rft_id=info:doi/10.7567%2FJJAP.55.05FG06&rft.externalDBID=n%2Fa&rft.externalDocID=10_7567_JJAP_55_05FG06
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0021-4922&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0021-4922&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0021-4922&client=summon