Optically modulated resistive switching in BiFeO 3 thin film

• Published in: Physica status solidi. A, Applications and materials science Vol. 213; no. 8; pp. 2183 - 2188
• Main Authors: Bogle, Kashinath, Narwade, Ranjana, Phatangare, Ambadas, Dahiwale, Shailendra, Mahabole, Megha, Khairnar, Rajendra
• Format: Journal Article
• Language: English
• Published: 01.08.2016

Exploiting the photosensitive property of BiFeO 3 thin films, we demonstrated a resistive switching memory cell having low V set voltage (+2.0 V), an ultrahigh ON/OFF ratio of ∼10 7 and a good retention time of more than 10 6  s. Synthesis conditions were optimized during a sol–gel‐assisted spin‐coa...