Improved Performances of CVD‐Grown MoS 2 Based Phototransistors Enabled by Encapsulation

• Published in: Advanced materials interfaces Vol. 8; no. 11
• Main Authors: Yang, Yujue, Liu, Zihao, Shu, Kaixiang, Li, Ling, Li, Jingbo
• Format: Journal Article
• Language: English
• Published: 01.06.2021

Abstract MoS 2 as a semiconducting 2D material has been a promising candidate for the next generation of optoelectronics due to its atomic thickness, mechanical flexibility, complementary metal‐oxide‐semiconductor compatibility, and large‐scale manufacturing. However, the poor quality such as low mo...