Crystallization Behavior and Luminescence of Inkjet Printing CH 3 NH 3 PbBr 3

Abstract Lead halide perovskites display remarkable optoelectronic properties, like large absorption coefficients, high photoluminescence quantum efficiencies, and long lifetime and diffusion length of photocarriers. This system is easily fabricated using solution processes and inkjet printing is an...

Full description

Saved in:
Bibliographic Details
Published inCrystal research and technology (1979) Vol. 56; no. 8
Main Authors Sun, Rui, Li, Haixia, Guan, Yimin, Du, Yong, Shen, Hui, Xu, Jiayue
Format Journal Article
LanguageEnglish
Published 01.08.2021
Online AccessGet full text

Cover

Loading…
Abstract Abstract Lead halide perovskites display remarkable optoelectronic properties, like large absorption coefficients, high photoluminescence quantum efficiencies, and long lifetime and diffusion length of photocarriers. This system is easily fabricated using solution processes and inkjet printing is an effective way to prepare halide perovskite films and complex patterns. In this work, the crystallization behaviors of inkjet printing CH 3 NH 3 PbBr 3 crystals are systematically investigated with varied I − doping, printing times, and solvents. Using N , N ‐dimethylformamide (DMF) solvent, CH 3 NH 3 PbBr 3− x I x ( x  = 0, 0.14, 0.29, 0.45, 0.59) are printed on the glass and the crystalline grains are developed from the (001) oriented tetragonal in side length of 10–50 µm to dendrite with increasing I − concentrations. The crystalline grains are kept tetragonal, while the average crystal size changes from 22 to 89 µm by increasing the number of printing from 10 to 1000 times. DMF and dimethyl sulfoxide (DMSO) are used as solvents for printing CH 3 NH 3 PbBr 3 , and more regular grains are obtained from DMF solvent. Several patterns are printed on glass and papers, and fluorescent two‐dimensional (2D) patterns are observed under the 480 nm excitation. The as‐printed patterns show excellent homogeneity and high reproducibility, indicating that the inkjet printing shows broad application prospects in flexible electronics.
AbstractList Abstract Lead halide perovskites display remarkable optoelectronic properties, like large absorption coefficients, high photoluminescence quantum efficiencies, and long lifetime and diffusion length of photocarriers. This system is easily fabricated using solution processes and inkjet printing is an effective way to prepare halide perovskite films and complex patterns. In this work, the crystallization behaviors of inkjet printing CH 3 NH 3 PbBr 3 crystals are systematically investigated with varied I − doping, printing times, and solvents. Using N , N ‐dimethylformamide (DMF) solvent, CH 3 NH 3 PbBr 3− x I x ( x  = 0, 0.14, 0.29, 0.45, 0.59) are printed on the glass and the crystalline grains are developed from the (001) oriented tetragonal in side length of 10–50 µm to dendrite with increasing I − concentrations. The crystalline grains are kept tetragonal, while the average crystal size changes from 22 to 89 µm by increasing the number of printing from 10 to 1000 times. DMF and dimethyl sulfoxide (DMSO) are used as solvents for printing CH 3 NH 3 PbBr 3 , and more regular grains are obtained from DMF solvent. Several patterns are printed on glass and papers, and fluorescent two‐dimensional (2D) patterns are observed under the 480 nm excitation. The as‐printed patterns show excellent homogeneity and high reproducibility, indicating that the inkjet printing shows broad application prospects in flexible electronics.
Author Guan, Yimin
Shen, Hui
Xu, Jiayue
Sun, Rui
Li, Haixia
Du, Yong
Author_xml – sequence: 1
  givenname: Rui
  surname: Sun
  fullname: Sun, Rui
  organization: Institute of Crystal Growth School of Materials Science and Engineering Shanghai Institute of Technology Shanghai 201418 China
– sequence: 2
  givenname: Haixia
  surname: Li
  fullname: Li, Haixia
  organization: Institute of Crystal Growth School of Materials Science and Engineering Shanghai Institute of Technology Shanghai 201418 China
– sequence: 3
  givenname: Yimin
  surname: Guan
  fullname: Guan, Yimin
  organization: Shanghai Industrial μTechnology Research Institute Shanghai 201800 China
– sequence: 4
  givenname: Yong
  surname: Du
  fullname: Du, Yong
  organization: Institute of Crystal Growth School of Materials Science and Engineering Shanghai Institute of Technology Shanghai 201418 China
– sequence: 5
  givenname: Hui
  orcidid: 0000-0003-4968-977X
  surname: Shen
  fullname: Shen, Hui
  organization: Institute of Crystal Growth School of Materials Science and Engineering Shanghai Institute of Technology Shanghai 201418 China
– sequence: 6
  givenname: Jiayue
  surname: Xu
  fullname: Xu, Jiayue
  organization: Institute of Crystal Growth School of Materials Science and Engineering Shanghai Institute of Technology Shanghai 201418 China
BookMark eNo9kMtOwzAURC1UJNLClrV_IOX6kbhZ0ghopQBddB_d2A64pA6yA1L5-iYCsZnRSEezOHMy8723hNwyWDIAfqcDDksOfBwA8oIkLOMslaCKGUmAC54yAXBF5jEeRqLIJU_IcxlOccCucz84uN7TtX3Hb9cHit7Q6uvovI3aem1p39Kt_zjYge6C84Pzb7TcUEFfptg160DFNblssYv25q8XZP_4sC83afX6tC3vq1SvpExVAahyUCgEWC2QgwJom1aiyFSRg2kyMDJvhAXMlF3lmWQGDGtgJERjxIIsf2916GMMtq0_gztiONUM6slFPbmo_12IM1YFUdI
CitedBy_id crossref_primary_10_1002_adom_202200534
crossref_primary_10_1002_crat_202200128
crossref_primary_10_1039_D3NH00119A
Cites_doi 10.1002/smll.201603217
10.1039/C8TC00249E
10.1002/smll.202004126
10.3390/ijms131012412
10.1039/C9TA04839A
10.1002/adom.201700157
10.1038/s41467-019-08981-w
10.1038/s41928-020-00487-4
10.1021/acsanm.0c00033
10.1021/acs.nanolett.6b05022
10.1039/C7CE01709J
10.1021/acsenergylett.8b00475
10.1021/acsami.0c11103
10.1002/crat.201600193
10.1021/acs.jpclett.8b01945
10.1126/science.267.5203.1473
10.1038/s41560-019-0466-3
10.1021/acs.cgd.9b01368
10.1021/acsami.0c14582
10.1039/C5CC06916E
10.1126/science.aaa2725
10.1021/acs.jpcc.6b02011
10.1038/s41586-020-2526-z
10.1038/s42005-018-0098-0
10.1002/adfm.202004612
10.1038/ncomms10896
10.1021/jz5002117
10.1021/acsami.0c10224
10.1038/s41560-020-00705-5
10.1016/j.nanoen.2018.06.073
10.1039/C4EE03224A
10.1038/s41586-018-0451-1
10.1016/j.apsusc.2020.146735
10.1038/s41467-020-18669-1
10.15541/jim20180234
10.1021/acsami.6b08528
10.1021/acs.cgd.9b01616
10.1021/ja809598r
10.1038/nphoton.2016.269
ContentType Journal Article
DBID AAYXX
CITATION
DOI 10.1002/crat.202100004
DatabaseName CrossRef
DatabaseTitle CrossRef
DatabaseTitleList CrossRef
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
Chemistry
EISSN 1521-4079
ExternalDocumentID 10_1002_crat_202100004
GroupedDBID .3N
.GA
.Y3
05W
0R~
10A
1L6
1OB
1OC
1ZS
31~
33P
3SF
3WU
4.4
50Y
50Z
51W
51X
52M
52N
52O
52P
52S
52T
52U
52W
52X
5GY
5VS
66C
702
7PT
8-0
8-1
8-3
8-4
8-5
8UM
930
A03
AAESR
AAEVG
AAHHS
AANLZ
AAONW
AASGY
AAXRX
AAYXX
AAZKR
ABCQN
ABCUV
ABEML
ABIJN
ABPVW
ACAHQ
ACBWZ
ACCFJ
ACCZN
ACGFS
ACPOU
ACSCC
ACXBN
ACXQS
ADBBV
ADEOM
ADIZJ
ADKYN
ADMGS
ADOZA
ADZMN
ADZOD
AEEZP
AEIGN
AEIMD
AENEX
AEQDE
AEUQT
AEUYR
AFBPY
AFFPM
AFGKR
AFPWT
AFZJQ
AHBTC
AI.
AITYG
AIURR
AIWBW
AJBDE
AJXKR
ALAGY
ALMA_UNASSIGNED_HOLDINGS
ALUQN
AMBMR
AMYDB
ASPBG
ATUGU
AUFTA
AVWKF
AZBYB
AZFZN
AZVAB
BAFTC
BDRZF
BFHJK
BHBCM
BMNLL
BMXJE
BNHUX
BROTX
BRXPI
BY8
CITATION
CS3
D-E
D-F
DCZOG
DPXWK
DR2
DRFUL
DRSTM
DU5
EBS
EJD
F00
F01
F04
FEDTE
G-S
G.N
GNP
GODZA
GYQRN
H.T
H.X
HF~
HGLYW
HVGLF
HZ~
IX1
J0M
JPC
KQQ
LATKE
LAW
LC2
LC3
LEEKS
LH4
LITHE
LOXES
LP6
LP7
LUTES
LW6
LYRES
M6R
MEWTI
MK4
MRFUL
MRSTM
MSFUL
MSSTM
MXFUL
MXSTM
N04
N05
N9A
NF~
O66
O9-
P2W
P2X
P4D
PALCI
Q.N
Q11
QB0
QRW
R.K
RIWAO
RJQFR
RNS
RNW
ROL
RWI
RX1
RYL
SAMSI
SUPJJ
TUS
UB1
VH1
W8V
W99
WBKPD
WGJPS
WIB
WIH
WIK
WOHZO
WQJ
WRC
WXSBR
WYISQ
XG1
XPP
XV2
ZZTAW
~IA
~WT
ID FETCH-LOGICAL-c844-790a7607a330ec3a20700fbf4a357960db50d46b3e0a57e86541d0d1b04a33bd3
ISSN 0232-1300
IngestDate Fri Aug 23 02:21:43 EDT 2024
IsPeerReviewed true
IsScholarly true
Issue 8
Language English
LinkModel OpenURL
MergedId FETCHMERGED-LOGICAL-c844-790a7607a330ec3a20700fbf4a357960db50d46b3e0a57e86541d0d1b04a33bd3
ORCID 0000-0003-4968-977X
ParticipantIDs crossref_primary_10_1002_crat_202100004
PublicationCentury 2000
PublicationDate 2021-08-00
PublicationDateYYYYMMDD 2021-08-01
PublicationDate_xml – month: 08
  year: 2021
  text: 2021-08-00
PublicationDecade 2020
PublicationTitle Crystal research and technology (1979)
PublicationYear 2021
References e_1_2_8_28_1
e_1_2_8_29_1
e_1_2_8_24_1
e_1_2_8_25_1
e_1_2_8_26_1
e_1_2_8_3_1
e_1_2_8_2_1
e_1_2_8_5_1
e_1_2_8_4_1
e_1_2_8_7_1
Liu Y. (e_1_2_8_43_1) 2019; 13
e_1_2_8_6_1
e_1_2_8_9_1
e_1_2_8_8_1
e_1_2_8_20_1
e_1_2_8_21_1
e_1_2_8_42_1
e_1_2_8_22_1
e_1_2_8_23_1
e_1_2_8_44_1
e_1_2_8_1_1
e_1_2_8_40_1
e_1_2_8_17_1
e_1_2_8_18_1
e_1_2_8_19_1
e_1_2_8_13_1
Li D. (e_1_2_8_27_1) 2020; 5
e_1_2_8_36_1
e_1_2_8_14_1
e_1_2_8_35_1
e_1_2_8_15_1
e_1_2_8_38_1
e_1_2_8_16_1
e_1_2_8_37_1
Zhen C. (e_1_2_8_39_1) 2001; 15
e_1_2_8_32_1
e_1_2_8_10_1
e_1_2_8_31_1
Wu S. (e_1_2_8_41_1) 1999
e_1_2_8_11_1
e_1_2_8_34_1
e_1_2_8_12_1
e_1_2_8_33_1
e_1_2_8_30_1
References_xml – ident: e_1_2_8_32_1
  doi: 10.1002/smll.201603217
– ident: e_1_2_8_16_1
  doi: 10.1039/C8TC00249E
– ident: e_1_2_8_20_1
  doi: 10.1002/smll.202004126
– volume: 15
  start-page: 2
  year: 2001
  ident: e_1_2_8_39_1
  publication-title: Chin. J. Mater. Res.
  contributor:
    fullname: Zhen C.
– ident: e_1_2_8_34_1
  doi: 10.3390/ijms131012412
– ident: e_1_2_8_38_1
  doi: 10.1039/C9TA04839A
– ident: e_1_2_8_14_1
  doi: 10.1002/adom.201700157
– ident: e_1_2_8_3_1
  doi: 10.1038/s41467-019-08981-w
– ident: e_1_2_8_7_1
  doi: 10.1038/s41928-020-00487-4
– ident: e_1_2_8_21_1
  doi: 10.1021/acsanm.0c00033
– ident: e_1_2_8_37_1
  doi: 10.1021/acs.nanolett.6b05022
– ident: e_1_2_8_9_1
  doi: 10.1039/C7CE01709J
– volume: 13
  start-page: 2042
  year: 2019
  ident: e_1_2_8_43_1
  publication-title: ACS Nano
  contributor:
    fullname: Liu Y.
– ident: e_1_2_8_44_1
  doi: 10.1021/acsenergylett.8b00475
– ident: e_1_2_8_29_1
  doi: 10.1021/acsami.0c11103
– ident: e_1_2_8_11_1
  doi: 10.1002/crat.201600193
– ident: e_1_2_8_10_1
  doi: 10.1021/acs.jpclett.8b01945
– ident: e_1_2_8_5_1
  doi: 10.1126/science.267.5203.1473
– ident: e_1_2_8_1_1
  doi: 10.1038/s41560-019-0466-3
– ident: e_1_2_8_25_1
– ident: e_1_2_8_33_1
  doi: 10.1021/acs.cgd.9b01368
– ident: e_1_2_8_12_1
  doi: 10.1021/acsami.0c14582
– ident: e_1_2_8_35_1
  doi: 10.1039/C5CC06916E
– volume-title: Concise Dictionary of Fine Chemicals
  year: 1999
  ident: e_1_2_8_41_1
  contributor:
    fullname: Wu S.
– ident: e_1_2_8_17_1
  doi: 10.1126/science.aaa2725
– ident: e_1_2_8_40_1
  doi: 10.1021/acs.jpcc.6b02011
– ident: e_1_2_8_22_1
  doi: 10.1038/s41586-020-2526-z
– ident: e_1_2_8_15_1
  doi: 10.1038/s42005-018-0098-0
– ident: e_1_2_8_31_1
  doi: 10.1002/adfm.202004612
– ident: e_1_2_8_42_1
  doi: 10.1038/ncomms10896
– ident: e_1_2_8_6_1
  doi: 10.1021/jz5002117
– ident: e_1_2_8_26_1
  doi: 10.1021/acsami.0c10224
– ident: e_1_2_8_23_1
  doi: 10.1038/s41560-020-00705-5
– ident: e_1_2_8_19_1
  doi: 10.1016/j.nanoen.2018.06.073
– ident: e_1_2_8_4_1
  doi: 10.1039/C4EE03224A
– ident: e_1_2_8_18_1
  doi: 10.1038/s41586-018-0451-1
– ident: e_1_2_8_30_1
  doi: 10.1016/j.apsusc.2020.146735
– ident: e_1_2_8_2_1
  doi: 10.1038/s41467-020-18669-1
– ident: e_1_2_8_13_1
  doi: 10.15541/jim20180234
– ident: e_1_2_8_28_1
  doi: 10.1021/acsami.6b08528
– ident: e_1_2_8_8_1
  doi: 10.1021/acs.cgd.9b01616
– ident: e_1_2_8_24_1
  doi: 10.1021/ja809598r
– volume: 5
  start-page: 6
  year: 2020
  ident: e_1_2_8_27_1
  publication-title: Adv. Mater. Technol.
  contributor:
    fullname: Li D.
– ident: e_1_2_8_36_1
  doi: 10.1038/nphoton.2016.269
SSID ssj0009642
Score 2.3259416
Snippet Abstract Lead halide perovskites display remarkable optoelectronic properties, like large absorption coefficients, high photoluminescence quantum efficiencies,...
SourceID crossref
SourceType Aggregation Database
Title Crystallization Behavior and Luminescence of Inkjet Printing CH 3 NH 3 PbBr 3
Volume 56
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1Nb9QwELWgPQCHihZQaUvlAxKHKMVrx3Z8hBS0QnRV0a1UTqs4caSFdrdaZSXg1zP-SkK1h5aLFVl2EmWexzPOzBuE3gqSSd4YkY6EVmnG81FaKipTLZWoGOO5LO3RwNlEjC-zL1f8qg_lddklrT6p_mzMK_kfqUIfyNVmyT5Ast1NoQOuQb7QgoShvZeMi9VvMO6ur0MuZSQ79GGRX9c3NqS9ckvXJYz8_GHa5Hw198UhinHCkoltzvXHVcKGZmq4cRKogHz2W9udwjt2JyXV4BjhYu2d-fW8C_Hx9bDL-a95p_oBkG7Yd1tLrLehXdcy7KHhCIKOugC4qKnALEvtfzG_qQRNSq1z6ivFRFXrOcQDpPKNGtwzwlYA_xP7KOfD9HtV_D9_ZwvrAgs9CTOd2fmzbv5jtE2l4jbi8_Rbzy6mhKut1L195PQk9P2_zx_YLAPjY_oc7QSvAX_wENhFj8xiDz0pYrG-PfRswCv5Ap3dAQaOwMAgRzwEBl422AMDR2DgYowZntjGAgOzl2j6-dO0GKehbkZa5VmWSkVKKQgsMkZMxUoKWp00uslKZhOPSa05qTOhmSEllya3leBrUo80gRFM1-wV2losF2YfYZ4rKrjKKgp2am4aTWml4ZKW4GeTpn6N3sUPM7v17CizzSI4uPfIQ_S0x9gR2mpXa_MGDL9WHzvx_QWB4FCB
link.rule.ids 315,786,790,27955,27956
linkProvider Wiley-Blackwell
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Crystallization+Behavior+and+Luminescence+of+Inkjet+Printing+CH+3+NH+3+PbBr+3&rft.jtitle=Crystal+research+and+technology+%281979%29&rft.au=Sun%2C+Rui&rft.au=Li%2C+Haixia&rft.au=Guan%2C+Yimin&rft.au=Du%2C+Yong&rft.date=2021-08-01&rft.issn=0232-1300&rft.eissn=1521-4079&rft.volume=56&rft.issue=8&rft_id=info:doi/10.1002%2Fcrat.202100004&rft.externalDBID=n%2Fa&rft.externalDocID=10_1002_crat_202100004
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0232-1300&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0232-1300&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0232-1300&client=summon