High resolution secondary ion mass spectrometry analysis of hydrogen behavior in SiO 2 /SiN/SiO 2 films with thermal treatment
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Published in | Japanese Journal of Applied Physics Vol. 53; no. 8S1; p. 8 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
01.08.2014
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Online Access | Get full text |
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ISSN: | 0021-4922 1347-4065 |
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DOI: | 10.7567/JJAP.53.08LC03 |