Revealing Intrinsic Superconductivity of the Nb/BiSbTe 2 Se Interface

Abstract Typically, topological superconductivity is reachable via proximity effect by a direct deposition of superconductor (S) on top of a topological insulator (TI) surface. Here, the double critical current in the Josephson junctions based on the topological insulator is observed in the fabricat...

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Published inAdvanced functional materials Vol. 32; no. 49
Main Authors Kudriashov, Andrei, Babich, Ian, Hovhannisyan, Razmik A., Shishkin, Andrey G., Kozlov, Sergei N., Fedorov, Alexander, Vyalikh, Denis V., Khestanova, Ekaterina, Kupriyanov, Mikhail Yu, Stolyarov, Vasily S.
Format Journal Article
LanguageEnglish
Published 01.12.2022
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Abstract Abstract Typically, topological superconductivity is reachable via proximity effect by a direct deposition of superconductor (S) on top of a topological insulator (TI) surface. Here, the double critical current in the Josephson junctions based on the topological insulator is observed in the fabricated planar Superconducting Quantum Interference Devicea. By measuring critical currents as a function of temperature and magnetic field, it is shown that the second critical current stems from the intrinsic superconductivity of the S–TI interface, which is supported by the modified Resistively Shunted Junction model and Transmission Electron Microscopy studies. This complex structure of the interface should be taken into account when the technological process involves Ar‐plasma cleaning.
AbstractList Abstract Typically, topological superconductivity is reachable via proximity effect by a direct deposition of superconductor (S) on top of a topological insulator (TI) surface. Here, the double critical current in the Josephson junctions based on the topological insulator is observed in the fabricated planar Superconducting Quantum Interference Devicea. By measuring critical currents as a function of temperature and magnetic field, it is shown that the second critical current stems from the intrinsic superconductivity of the S–TI interface, which is supported by the modified Resistively Shunted Junction model and Transmission Electron Microscopy studies. This complex structure of the interface should be taken into account when the technological process involves Ar‐plasma cleaning.
Author Babich, Ian
Kudriashov, Andrei
Shishkin, Andrey G.
Kozlov, Sergei N.
Stolyarov, Vasily S.
Khestanova, Ekaterina
Hovhannisyan, Razmik A.
Vyalikh, Denis V.
Fedorov, Alexander
Kupriyanov, Mikhail Yu
Author_xml – sequence: 1
  givenname: Andrei
  orcidid: 0000-0002-9088-318X
  surname: Kudriashov
  fullname: Kudriashov, Andrei
  organization: Advanced mesoscience and nanotechnology centre Moscow Institute of Physics and Technology Dolgoprudny 141700 Russia
– sequence: 2
  givenname: Ian
  surname: Babich
  fullname: Babich, Ian
  organization: Advanced mesoscience and nanotechnology centre Moscow Institute of Physics and Technology Dolgoprudny 141700 Russia
– sequence: 3
  givenname: Razmik A.
  surname: Hovhannisyan
  fullname: Hovhannisyan, Razmik A.
  organization: Advanced mesoscience and nanotechnology centre Moscow Institute of Physics and Technology Dolgoprudny 141700 Russia
– sequence: 4
  givenname: Andrey G.
  surname: Shishkin
  fullname: Shishkin, Andrey G.
  organization: Advanced mesoscience and nanotechnology centre Moscow Institute of Physics and Technology Dolgoprudny 141700 Russia, National University of Science and Technology MISIS Moscow 119049 Russia, Dukhov Research Institute of Automatics (VNIIA) Moscow 127055 Russia
– sequence: 5
  givenname: Sergei N.
  orcidid: 0000-0001-6999-1672
  surname: Kozlov
  fullname: Kozlov, Sergei N.
  organization: Advanced mesoscience and nanotechnology centre Moscow Institute of Physics and Technology Dolgoprudny 141700 Russia, Dukhov Research Institute of Automatics (VNIIA) Moscow 127055 Russia, Fundamental Physical and Chemical Engineering Department MSU Moscow 119991 Russia
– sequence: 6
  givenname: Alexander
  surname: Fedorov
  fullname: Fedorov, Alexander
  organization: Leibniz Institute for Solid State and Materials Research P.O. Box 270116 D‐01171 Dresden Germany
– sequence: 7
  givenname: Denis V.
  orcidid: 0000-0001-9053-7511
  surname: Vyalikh
  fullname: Vyalikh, Denis V.
  organization: Donostia International Physics Center (DIPC) Donostia‐San Sebastian 20018 Basque Country Spain, IKERBASQUE Basque Foundation for Science Bilbao 48011 Spain
– sequence: 8
  givenname: Ekaterina
  surname: Khestanova
  fullname: Khestanova, Ekaterina
  organization: Department of Physics and Engineering ITMO University Saint Petersburg 191002 Russia
– sequence: 9
  givenname: Mikhail Yu
  surname: Kupriyanov
  fullname: Kupriyanov, Mikhail Yu
  organization: National University of Science and Technology MISIS Moscow 119049 Russia, Skobeltsyn Institute of Nuclear Physics MSU Moscow 119991 Russia
– sequence: 10
  givenname: Vasily S.
  orcidid: 0000-0002-5317-0818
  surname: Stolyarov
  fullname: Stolyarov, Vasily S.
  organization: Advanced mesoscience and nanotechnology centre Moscow Institute of Physics and Technology Dolgoprudny 141700 Russia, National University of Science and Technology MISIS Moscow 119049 Russia, Dukhov Research Institute of Automatics (VNIIA) Moscow 127055 Russia
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Snippet Abstract Typically, topological superconductivity is reachable via proximity effect by a direct deposition of superconductor (S) on top of a topological...
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Title Revealing Intrinsic Superconductivity of the Nb/BiSbTe 2 Se Interface
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