Electrical and Optical Characterization of GeON Layers with high-k Gate Stacks on Germanium for Future MOSFETs

Saved in:
Bibliographic Details
Published inMeeting abstracts (Electrochemical Society) Vol. MA2012-01; no. 16; p. 690
Main Authors Murad, Shahjahan N., Baine, Paul T., Montgomery, John H., McNeill, David W., Mitchell, S.J.N., Armstrong, B.M., Modreanu, Mircea
Format Journal Article
LanguageEnglish
Published 15.02.2012
Online AccessGet full text

Cover

Loading…
Author McNeill, David W.
Murad, Shahjahan N.
Armstrong, B.M.
Montgomery, John H.
Mitchell, S.J.N.
Baine, Paul T.
Modreanu, Mircea
Author_xml – sequence: 1
  givenname: Shahjahan N.
  surname: Murad
  fullname: Murad, Shahjahan N.
– sequence: 2
  givenname: Paul T.
  surname: Baine
  fullname: Baine, Paul T.
– sequence: 3
  givenname: John H.
  surname: Montgomery
  fullname: Montgomery, John H.
– sequence: 4
  givenname: David W.
  surname: McNeill
  fullname: McNeill, David W.
– sequence: 5
  givenname: S.J.N.
  surname: Mitchell
  fullname: Mitchell, S.J.N.
– sequence: 6
  givenname: B.M.
  surname: Armstrong
  fullname: Armstrong, B.M.
– sequence: 7
  givenname: Mircea
  surname: Modreanu
  fullname: Modreanu, Mircea
BookMark eNo9kEFPwjAYhhuDiYDePfYPTPq121iPhMAkAXeAe9N2X90ENtKWGPz1ohhP75M3b97DMyKDru-QkGdgLwCpnGxmnAFPGEwgn-SS3ZEhhwwSzkQ2-OdUPJBRCB-MiaLgfEi6xQFt9K3VB6q7mlan-MvzRnttI_r2S8e272jvaInVG13rC_pAP9vY0KZ9b5I9LXVEuo3a7gO9Lkv0R9215yN1vafLczx7pJtqu1zswiO5d_oQ8Okvx2R3reevyboqV_PZOrGFYMkUTMY0cM1rYRzWRVEb5KlxnGWprY1lOchsinJqrZUydzmHQqYaa5NJI1CMCbvdWt-H4NGpk2-P2l8UMPWjS910KQYKcnXVJb4B4dRfww
ContentType Journal Article
DBID AAYXX
CITATION
DOI 10.1149/MA2012-01/16/690
DatabaseName CrossRef
DatabaseTitle CrossRef
DeliveryMethod fulltext_linktorsrc
Discipline Chemistry
EISSN 2151-2035
EndPage 690
ExternalDocumentID 10_1149_MA2012_01_16_690
GroupedDBID 5VS
AAYXX
ACHIP
ADBBV
ALMA_UNASSIGNED_HOLDINGS
BTFSW
CITATION
CJUJL
HH5
IOP
JGOPE
KOT
N5L
O3W
OK1
REC
RHF
ID FETCH-LOGICAL-c830-71b50a12a2d3bfed88dbe24bf2054cdbc061957e97ccc996f621894aedb59b3e3
ISSN 2151-2043
IngestDate Fri Aug 23 01:23:58 EDT 2024
IsDoiOpenAccess false
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Issue 16
Language English
LinkModel OpenURL
MergedId FETCHMERGED-LOGICAL-c830-71b50a12a2d3bfed88dbe24bf2054cdbc061957e97ccc996f621894aedb59b3e3
OpenAccessLink https://iopscience.iop.org/article/10.1149/MA2012-01/16/690/pdf
PageCount 1
ParticipantIDs crossref_primary_10_1149_MA2012_01_16_690
PublicationCentury 2000
PublicationDate 2012-02-15
PublicationDateYYYYMMDD 2012-02-15
PublicationDate_xml – month: 02
  year: 2012
  text: 2012-02-15
  day: 15
PublicationDecade 2010
PublicationTitle Meeting abstracts (Electrochemical Society)
PublicationYear 2012
SSID ssj0038822
Score 1.511392
SourceID crossref
SourceType Aggregation Database
StartPage 690
Title Electrical and Optical Characterization of GeON Layers with high-k Gate Stacks on Germanium for Future MOSFETs
Volume MA2012-01
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1Lb9NAEF6FcoAL4ine2gMXZG3iV_w4VlHbgEiC1CB6s_ZlUkqdqk0u_ZP8JWY89mZVQKJcnGSzXjmZT7PfzM6DsXeFNEBUrRUG2IjAZttCFTIScWqyXBpsbY6G4myeTb-kH0_GJ4PBTy9qabtRQ339x7yS_5EqjIFcMUv2FpJ1i8IAvAf5whUkDNd_kvFB28PG5fsvLsgxPXFFmK8dITyyi3nwSSLBJt8r1ikWZwF6z5Bx6rP23OAIFXVzuj1vww8P24IjwWxxfHiwvPJ57My2qdKBVOgqwYAQYKr0ONiCi2oQdBGhnrMBxEqQOl7J1Xe5AuUyH-6cqafkXsVoxWDpxkHtbL6tzy0d-LehPtPdlxrd2D9ceH7wdeg7MjAiJBaUykn6DsmHwFRd2pr8Mapo0ivs2T7dHvn49LVwRh1Iuw29-_T7XpFiqVW3GLow0I_hbvZLc9_YMl0gI6V1lxWtUoVRFWUVrHCH3Y1B86HK_bD43FODBMwZPNZyv7Q_N0_LkXuOUZSNMqQIjid5hGf5kD3oLBW-T7B7xAa2eczuTfoGgU9Ys4MfB_jxDn78Jvz4uuYIP07w4wg_TvDjCD9O8OMw08GPA_w4wY938HvKlvAymYqufYfQRRKKPFLjUEaxjE2iamuKwigbp6qOwUrQRmlgkuU4t2WutQaru86AbZaptEaNS5XY5Bnba9aNfc54EuegU-rQSEy7lnGpZJbWYWJhmsnr8gV73_9X1QUVaan-JpmXt5j7it3fAfU129tcbu0b4KAb9baV6y9-o4Gg
link.rule.ids 315,783,787,27936,27937
linkProvider IOP Publishing
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Electrical+and+Optical+Characterization+of+GeON+Layers+with+high-k+Gate+Stacks+on+Germanium+for+Future+MOSFETs&rft.jtitle=Meeting+abstracts+%28Electrochemical+Society%29&rft.au=Murad%2C+Shahjahan+N.&rft.au=Baine%2C+Paul+T.&rft.au=Montgomery%2C+John+H.&rft.au=McNeill%2C+David+W.&rft.date=2012-02-15&rft.issn=2151-2043&rft.eissn=2151-2035&rft.volume=MA2012-01&rft.issue=16&rft.spage=690&rft.epage=690&rft_id=info:doi/10.1149%2FMA2012-01%2F16%2F690&rft.externalDBID=n%2Fa&rft.externalDocID=10_1149_MA2012_01_16_690
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=2151-2043&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=2151-2043&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=2151-2043&client=summon