Spatial Distribution and Surface Loss of CF 3 and CF 2 Radicals in a CF 4 Etching Plasma

The absolute number density and the spatial distribution of CF 3 and CF 2 radicals in a radio-frequency CF 4 plasma were measured using threshold-ionization mass spectrometry. The time constant of density decay in an afterglow was measured to be almost independent of pressures (15-100 mTorr) and rf...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 32; no. 3A; p. L353
Main Authors Hikosaka, Yukinobu, Hirotaka Toyoda, Hirotaka Toyoda, Hideo Sugai, Hideo Sugai
Format Journal Article
LanguageEnglish
Published 01.03.1993
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Summary:The absolute number density and the spatial distribution of CF 3 and CF 2 radicals in a radio-frequency CF 4 plasma were measured using threshold-ionization mass spectrometry. The time constant of density decay in an afterglow was measured to be almost independent of pressures (15-100 mTorr) and rf powers (10-100 W). This suggests that surface reactions rather than gas phase reactions may primarily be responsibile for the radical loss. The surface loss probability s of CF 3 and CF 2 radicals was estimated in this well-defined system to be s =0.012 and 0.014, respectively.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.32.L353