Current-Voltage Modeling of 3D-NAND String Using Genetic Algorithm

• Published in: Journal of semiconductor technology and science Vol. 25; no. 4; pp. 420 - 426
• Main Authors: Park, Gihong, Kim, Jung-Nam, Park, Jun-Hui, Sung, Suk-Kang, Kim, Garam, Kim, Yoon
• Format: Journal Article
• Language: English
• Published: 대한전자공학회 31.08.2025
• Subjects: 전기공학

This study presents a modeling approach for the current-voltage (I-V) characteristics of 3D-NAND flash memory using the BSIM-CMG (GEOMOD=3) transistor model combined with a genetic algorithm-based parameter optimization technique. Reference data were extracted from technology computer-aided design (...