Current-Voltage Modeling of 3D-NAND String Using Genetic Algorithm

• Published in: Journal of semiconductor technology and science Vol. 25; no. 4; pp. 420 - 426
• Main Authors: Park, Gihong, Kim, Jung-Nam, Park, Jun-Hui, Sung, Suk-Kang, Kim, Garam, Kim, Yoon
• Format: Journal Article
• Language: English
• Published: 대한전자공학회 31.08.2025
• Subjects: 전기공학
• DOI: 10.5573/JSTS.2025.25.4.420
• ISSN: 1598-1657

This study presents a modeling approach for the current-voltage (I-V) characteristics of 3D-NAND flash memory using the BSIM-CMG (GEOMOD=3) transistor model combined with a genetic algorithm-based parameter optimization technique. Reference data were extracted from technology computer-aided design (TCAD) simulations for structures with one, three, and five word-line (WL) layers, and these data were utilized to optimize the parameters of the BSIM-CMG model. The results demonstrate that the I-V characteristics of 3D-NAND strings with up to 500 layers can be effectively represented, capturing variations in the I-V curves depending on the WL position on both linear and logarithmic scales. Furthermore, the current-voltage characteristics of tapered channel hole structures were successfully modeled. This work provides a robust framework for accurately simulating the electrical behavior of advanced 3D-NAND flash memory devices. KCI Citation Count: 0