A BJT-based CMOS Temperature Sensor With a ±0.94°C 3σ-inaccuracy From −40°C to +150°C

• Published in: Journal of semiconductor technology and science Vol. 25; no. 3; pp. 236 - 244
• Main Authors: Park, Tae-June, Boo, Jun-Ho, Lim, Jae-Geun, Kim, Hyoung-Jung, Lee, Jae-Hyuk, Park, Seong-Bo, Cho, Won-Jun, Ahn, Gil-Cho
• Format: Journal Article
• Language: English
• Published: 대한전자공학회 30.06.2025
• Subjects: 전기공학

This paper presents a BJT-based CMOS temperature sensor designed for an extended temperature range. In the sensing frontend, a β-compensation technique is employed to mitigate the effects of the finite current gain (β) of PNP transistors. Additionally, bitstream-controlled dynamic element matching (...