Unveiling the complex electronic structure of amorphous metal oxides

• Published in: Proceedings of the National Academy of Sciences - PNAS Vol. 108; no. 16; pp. 6355 - 6360
• Main Authors: à rhammar, C, Pietzsch, Annette, Bock, Nicolas, Holmström, Erik, Araujo, C. Moyses, GrÃ¥sjö, Johan, Zhao, Shuxi, Green, Sara, Peery, T, Hennies, Franz, Amerioun, Shahrad, Föhlisch, Alexander, Schlappa, Justine, Schmitt, Thorsten, Strocov, Vladimir N, Niklasson, Gunnar A, Wallace, Duane C, Rubensson, Jan-Erik, Johansson, Börje, Ahuja, Rajeev
• Format: Journal Article
• Language: English
• Published: Washington National Academy of Sciences 19.04.2011; National Acad Sciences
• Subjects: ab initio; Alumina; Aluminum; aluminum oxide; Atoms; Band gap; Band structure; Cells; coating; electronic circuits; Electronic structure; Electrons; energy; Engineering Science with specialization in Solid State Physics; Fysik; Ions; Liquids; molecular dynamics; Molecules; NATURAL SCIENCES; NATURVETENSKAP; Nitric oxide; Oxides; Oxygen; Physical Sciences; Physics; semiconductors; Silica; Silicon; Spectrometers; spectroscopy; Spectrum analysis; stochastic quench; Teknisk fysik med inriktning mot fasta tillståndets fysik; Thin films; traps; X-radiation; X-ray absorption spectroscopy

Amorphous materials represent a large and important emerging area of material's science. Amorphous oxides are key technological oxides in applications such as a gate dielectric in Complementary metal-oxide semiconductor devices and in Silicon-Oxide-Nitride-Oxide-Silicon and TANOS (TaN-Al₂O₃...