DARPA's GaN technology thrust

• Published in: 2010 IEEE MTT-S International Microwave Symposium p. 1
• Main Authors: Rosker, M. J., Albrecht, J. D., Cohen, E., Hodiak, J., Chang, T.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.05.2010
• Subjects: Charge carrier density; Cutoff frequency; Dielectrics; Electrons; Gallium nitride; HEMTs; MODFETs; Radio frequency; Transistors; Wide band gap semiconductors

DARPA/MTO has sponsored III-N electronics programs to combine associated high intrinsic breakdown voltages, high electron saturation velocities, and large sheet carrier densities. The WBGS-RF program has developed GaN HEMTs for high power RF electronics resulting in sufficiently mature transistors t...